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參數(shù)資料
| 型號： | CNA1012K |
| 廠商： | PANASONIC CORP |
| 元件分類： | 開關(guān) |
| 英文描述： | Photo lnterrupter For contactless SW, object detection |
| 中文描述： | 5 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH TRANSISTOR OUTPUT |
| 封裝： | PISTR104-013, 4 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 88K |
| 代理商： | CNA1012K |
Transmissive Photosensors (Photo lnterrupters)
CNA1012K
(ON1114)
Photo lnterrupter
1
Publication date: April 2004
SHG00019BED
For contactless SW, object detection
■
Overview
CNA1012K is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element, and
a high sensitivity phototransistor is used as the light detecting ele-
ment. The two elements are arranged so as to face each other, and
objects passing between them are detected.
■
Features
Highly precise position detection: 0.3 mm
Wide gap between emitting and detecting elements, suitable for
thick plate detection
Fast response: t
, t
=
6
μ
s (typ.)
Small output current variation against change in temperature
Large output current
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Reverse voltage
Symbol
V
R
I
F
P
D
V
CEO
Rating
3
Unit
V
Input (Light
emitting diode) Forward current
Power dissipation
*1
Output (Photo Collector-emitter voltage
transistor)
(Base open)
50
mA
75
30
mW
V
Emitter-collector voltage
(Base open)
V
ECO
5
V
Collector current
Collector power dissipation
*2
I
C
P
C
T
opr
T
stg
20
mA
100
mW
°
C
°
C
Temperature
Operating ambient temperature
25 to
+
85
30 to
+
100
Storage temperature
Parameter
Forward voltage
Symbol
V
F
I
R
I
CEO
Conditions
Min
Typ
1.2
Max
1.5
Unit
V
μ
A
nA
Input
I
F
=
50 mA
V
R
=
3 V
V
CE
=
10 V
characteristics
Reverse current
Collector-emitter cutoff current
characteristics
(Base open)
Collector-emitter capacitance
Collector current
10
200
Output
C
C
I
C
V
CE
=
10 V, f
=
1 MHz
V
CE
=
10 V, I
F
=
20 mA
I
F
=
50 mA, I
C
=
0.1 mA
V
CC
=
10 V, I
C
=
1 mA
R
L
=
100
5
pF
Transfer
0.7
mA
characteristics
Collector-emitter saturation voltage
V
CE(sat)
Rise time
*
Fall time
*
0.3
V
μ
s
μ
s
t
r
t
f
6
6
■
Electrical-Optical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3.*: Switching time measurement circuit
Sig. in
50
R
L
V
CC
Sig. out
10%
90%
t
t
(Input pulse)
(Output pulse)
t
r
: Rise time
t
f
: Fall time
Note)*1: Input power derating ratio is 1.0 mW/
°
C at
T
a
≥
25
°
C.
*2: Output power derating ratio is 1.34 mW/
°
C
at T
a
≥
25
°
C.
Unit: mm
2
3
1
4
SEC. A-A'
Mark for indicating
LED side
2
±
6
±
1
±
6
0.45
±0.1
2-0.45
±0.2
2-R0.5
A
13.0
±0.3
5.0
±0.2
0.45
±0.1
(10.0)
(2.54)
A'
2
±
2
±
Device
center
(Note) ( ) Dimension is reference
1: Anode
2: Cathode
3: Collector
4: Emitter
PISTR104-013 Package
Note) The part number in the parenthesis shows conventional part number.
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