- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382896 > CNA1011K(ON1113) Opto-Electronic Device - Photocouplers·Photosensors - Transmissive Photosensors PDF資料下載
參數(shù)資料
| 型號： | CNA1011K(ON1113) |
| 英文描述： | Opto-Electronic Device - Photocouplers·Photosensors - Transmissive Photosensors |
| 中文描述： | 光電子器件-光耦·光電傳感器-透射式光電傳感器 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 59K |
| 代理商： | CNA1011K(ON1113) |
1
Transmissive Photosensors (Photo Interrupters)
CNA1012K
(ON1114)
Photo Interrupter
2
3
1
4
Pin connection
Unit : mm
SEC. A-A'
Mark for indicating
LED side
2
±
0
6
±
0
1
±
0
6
0.45
±
0.1
2-0.45
±
0.2
A
13.0
±
0.3
5.0
±
0.2
0.45
±
0.1
(10.0)
(2.54)
A'
2
±
0
2
±
0
Device
center
2
3
1
4
(Note) ( ) Dimension is reference
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
For contactless SW, object detection
Features
Highly precise position detection : 0.3 mm
Wide gap between emitting and detecting elements, suitable for
thick plate detection
Fast response : t
r
, t
f
= 6
μ
s (typ.)
Small output current variation against change in temperature
Large output current
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Symbol
Ratings
V
R
I
F
P
D*1
I
C
V
CEO
V
ECO
P
C*2
T
opr
–25 to +85
T
stg
–30 to +100
Unit
V
mA
mW
mA
V
V
mW
C
C
Input (Light
emitting diode)
3
50
75
20
30
5
100
Output (Photo
Collector to emitter voltage
transistor)
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature
Temperature
Electrical Characteristics
(Ta = 25C)
Parameter
Forward voltage (DC)
characteristics
Reverse current (DC)
Collector cutoff current
characteristics
Collector to emitter capacitance
Collector current
Response time
Symbol
V
F
I
R
I
CEO
C
C
I
C
t
r
, t
f*
Conditions
min
typ
1.2
max
1.5
10
200
Unit
V
μ
A
nA
pF
mA
μ
s
V
Input
I
F
= 50mA
V
R
= 3V
V
CE
= 10V
V
CE
= 10V, f = 1MHz
V
CE
= 10V, I
F
= 20mA
V
CC
= 10V, I
C
= 1mA, R
L
= 100
Output
5
Transfer
characteristics
0.7
6
Collector to emitter saturation voltage
V
CE(sat)
I
F
= 50mA, I
C
= 0.1mA
*
Switching time measurement circuit
0.3
*1
Input power derating ratio is
1.0 mW/C at Ta
≥
25C.
*2
Output power derating ratio is
1.33 mW/C at Ta
≥
25C.
Overview
CNA1012K is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
Note) The part number in the parenthesis shows conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CNZ1023(ON1023) | 光デバイス － フォトカプラ?フォトセンサ － 透過形フォトセンサ |
| CNA1302K | Opto-Electronic Device - Photocouplers·Photosensors - Transmissive Photosensors |
| CNA1302K(ON1004) | 光デバイス － フォトカプラ?フォトセンサ － 透過形フォトセンサ |
| CNA1303K(ON1003) | 光デバイス － フォトカプラ?フォトセンサ － 透過形フォトセンサ |
| CNB1009(ON2173) | 光デバイス － フォトカプラ?フォトセンサ － 反射形フォトセンサ |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CNA1012K | 功能描述:PHOTO INTERRUPTER 5MM SLOT PCB RoHS:是 類別:傳感器，轉(zhuǎn)換器 >> 光學(xué) - 光斷續(xù)器 - 槽型 - 晶體管輸出 系列:- 產(chǎn)品變化通告:Internal Chip Change 04/May/2007 標(biāo)準(zhǔn)包裝:100 系列:- 檢測距離:0.063"（1.6mm） 檢測方法:可傳導(dǎo)的 輸出配置:光電晶體管 電流 - DC 正向(If):50mA 電流 - 集電極 (Ic)（最大）:20mA 電壓 - 集電極發(fā)射極擊穿（最大）:35V 響應(yīng)時間:35µs，35µs 安裝類型:通孔 封裝/外殼:PCB 安裝 包裝:管件 類型:無放大 工作溫度:-25°C ~ 85°C 其它名稱:425-1978-5 |
| CNA1012K(ON1114) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CNA1012K (ON1114) - Photo Interrupter |
| CNA1014H | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Photo Interrupter |
| CNA1015 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Photo Interrupters |
| CNA10E2500FB | 制造商:IXYS Corporation 功能描述:GenX3 1200V IGBTs |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。