參數(shù)資料
型號(hào)： CMT14N50N3P
廠商： Electronic Theatre Controls, Inc.
英文描述： POWER FIELD EFFECT TRANSISTOR
中文描述： 功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 335K
代理商： CMT14N50N3P
CMT14N50
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
2002/12/18 Champion Microelectronic Corporation
Page 2
ORDERING INFORMATION
Part Number
CMT14N50N3P
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25
℃
.
Package
TO-3P
CMT14N50
Typ
Characteristic
Symbol
V
(BR)DSS
Min
500
Max
Units
V
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μ
A)
Drain-Source Leakage Current
(V
DS
= 500 V, V
GS
= 0 V)
(V
DS
= 400 V, V
GS
= 0 V, T
J
= 125
℃
)
Gate-Source Leakage Current-Forward
(V
gsf
= 20 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= 20 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μ
A)
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 8.4A) *
Drain-Source On-Voltage (V
GS
= 10 V)
(I
D
= 14 A)
Forward Transconductance (V
DS
= 50 V, I
D
= 8.4A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
I
DSS
25
250
100
μA
I
GSSF
nA
I
GSSR
100
nA
V
GS(th)
2.0
4.0
V
R
DS(on)
V
DS(on)
0.4
7.5
V
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
9.3
mhos
pF
pF
pF
2038
307
10
15
36
35
29
5.0
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
ns
ns
ns
ns
(V
DD
= 250 V, I
D
= 14 A,
R
D
= 17
,
R
G
= 6.2
) *
64
16
26
nC
nC
nC
(V
DS
= 400 V, I
D
= 14 A,
V
GS
= 10 V)*
nH
L
S
13
nH
V
SD
t
on
t
rr
1.5
731
V
ns
ns
**
487
(I
S
= 14 A, V
GS
= 0 V,
d
IS
/d
t
= 100A/μs)
* Pulse Test: Pulse Width
≦
300μs, Duty Cycle
≦
2%
** Negligible, Dominated by circuit inductance
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