參數(shù)資料
型號(hào)： CMT14N50N3P
廠商： Electronic Theatre Controls, Inc.
英文描述： POWER FIELD EFFECT TRANSISTOR
中文描述： 功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 335K
代理商： CMT14N50N3P
CMT14N50
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
2002/12/18 Champion Microelectronic Corporation
Page 1
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
TO-3P
Top View
FEATURES
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS
(on) Specified at Elevated Temperature
SYMBOL
1
2
3
G
D
S
ABSOLUTE MAXIMUM RATINGS
D
S
G
N-Channel MOSFET
Rating
Symbol
I
D
I
DM
V
GS
V
GSM
P
D
Value
14
56
±20
±40
190
1.5
-55 to 150
588
0.65
40
260
Unit
A
V
V
W
W/
℃
℃
mJ
Drain to Current
－
Continuous
－
Pulsed
Gate-to-Source Voltage
－
Continue
－
Non-repetitive
Total Power Dissipation
Derate above 25
℃
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
－
T
J
= 25
℃
(V
DD
= 100V, V
GS
= 10V, I
L
= 14A, L = 6mH, R
G
= 25
)
Thermal Resistance
－
Junction to Case
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
T
J
, T
STG
E
AS
θ
JC
θ
JA
T
L
℃
/W
℃
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