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參數(shù)資料
| 型號(hào)： | CMT10N10 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | POWER FIELD EFFECT TRANSISTOR |
| 中文描述： | 功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 168K |
| 代理商： | CMT10N10 |
CMT10N10
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
2001/12/24
Preliminary
Rev. 1
Champion Microelectronic Corporation
Page 2
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25
℃
.
CMT10N10
Typ
Characteristic
Symbol
V
(BR)DSS
Min
100
Max
Units
V
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μ
A)
Drain-Source Leakage Current
(V
DS
= 100 V, V
GS
= 0 V)
(V
DS
= 100 V, V
GS
= 0 V, T
J
= 125
℃
)
Gate-Source Leakage Current-Forward
(V
gsf
= 20 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= 20 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μ
A)
Static Drain-Source On-Resistance (V
GS
= 5.0 V, I
D
= 5.0A) *
Drain-Source On-Voltage (V
GS
= 5.0 V)
(I
D
= 10 A)
Forward Transconductance (V
DS
= 50 V, I
D
= 5.0A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
I
DSS
25
100
100
μ
A
I
GSSF
nA
I
GSSR
100
nA
V
GS(th)
1.0
1.45
2.0
V
R
DS(on)
V
DS(on)
0.18
2.6
V
1.85
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
3.5
mhos
pF
pF
pF
741
175
18.9
11
74
17
38
9.3
2.56
4.4
4.5
1040
250
40
20
150
30
80
15
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
ns
ns
ns
ns
(V
DD
= 50 V, I
D
= 10 A,
V
GS
= 5.0 V,
R
G
= 9.1
) *
nC
nC
nC
(V
DS
= 80 V, I
D
= 10 A,
V
GS
= 5.0 V)*
nH
L
S
7.5
nH
V
SD
t
on
t
rr
1.5
V
ns
ns
**
(I
S
= 10 A, V
GS
= 0 V,
d
IS
/d
t
= 100A/μs)
124.7
* Pulse Test: Pulse Width
≦
300μs, Duty Cycle
≦
2%
** Negligible, Dominated by circuit inductance
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