參數(shù)資料
型號： CMS15
廠商： Toshiba Corporation
英文描述： Switching Mode Power Supply Applications
中文描述： 開關電源的應用
文件頁數(shù)： 1/5頁
文件大?。?/td> 196K
代理商： CMS15
CMS15
2006-11-13
1
TOSHIBA Schottky Barrier Diode
CMS15
Switching Mode Power Supply Applications
(Output voltage:
≤
12 V)
DC/DC Converter Applications
Forward voltage: V
FM
= 0.58 V (max)
Average forward current: I
F (AV)
= 3.0 A
Repetitive peak reverse voltage: V
RRM
= 60 V
Suitable for compact assembly due to small surface-mount package
“M
FLAT
TM
” (Toshiba package name)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
60
V
Average forward current
3.0 (Note 1)
60 (50Hz)
40~150
40~150
A
Non-repetitive peak surge current
A
Junction temperature
°C
Storage temperature range
°C
Note 1: T
=
95°C
Device mounted on a ceramic board
Board size: 50 mm
×
50 mm
Soldering size: 2 mm
×
2 mm
Board thickness: 0.64 t
Rectangular waveform (
α
=
180°), V
R
=
30 V
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
FM (1)
V
FM (2)
V
FM (3)
I
RRM (1)
I
RRM (2)
C
j
I
FM
=
1.0 A (pulse test)
I
FM
=
2.0 A (pulse test)
I
FM
=
3.0 A (pulse test)
V
RRM
=
5 V (pulse test)
V
RRM
=
60 V (pulse test)
V
R
=
10 V, f
=
1.0 MHz
Device mounted on a ceramic board
(board size: 50 mm
×
50 mm)
(soldering land: 2 mm
×
2 mm)
(board thickness: 0.64 t)
0.43
0.49
Peak forward voltage
0.55
0.58
V
1.0
Peak repetitive reverse current
25
300
μ
A
Junction capacitance
102
pF
60
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 6 mm
×
6 mm)
(board thickness: 1.6 t)
135
Thermal resistance
(junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 2.1 mm
×
1.4 mm)
(board thickness: 1.6 t)
210
°C/W
Thermal resistance
(junction to lead)
R
th (j-
)
16
°C/W
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
3-4E1A
Weight: 0.023 g (typ.)
相關PDF資料
PDF描述
CMS17 Switching Mode Power Supply Applications
CMT14N50 POWER FIELD EFFECT TRANSISTOR
CMT14N50N3P POWER FIELD EFFECT TRANSISTOR
CMT20N15 Champion Microelectronic Corporation
CMT20N220 Champion Microelectronic Corporation
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