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參數(shù)資料
| 型號： | CMS03_06 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.2 to 13.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| 中文描述： | 開關電源的應用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 168K |
| 代理商： | CMS03_06 |
CMS03
2006-11-13
1
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CMS03
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Forward voltage: V
FM
= 0.45 V (max)
Average forward current: I
F (AV)
= 3.0 A
Repetitive peak reverse voltage: V
RRM
= 30 V
Suitable for compact assembly due to small surface-mount package
“M
FLAT
TM
” (Toshiba package name)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
30
V
I
F (AV)
(Note 1)
3.0
(Ta
=
28.4°C)
Average forward current
I
F (AV)
3.0
(T
=
117.6°C)
A
Peak one cycle surge forward current
(non-repetitive)
I
FSM
40 (50 Hz)
A
Junction temperature
T
j
40~150
°C
Storage temperature
T
stg
40~150
°C
Note 1: Device mounted on a ceramic board
(board size: 50 mm
×
50 mm, soldering land: 2 mm
×
2 mm)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
FM (1)
I
FM
=
0.5 A
0.35
V
FM (2)
I
FM
=
1.0 A
0.37
Peak forward voltage
V
FM (3)
I
FM
=
3.0 A
0.42
0.45
V
I
RRM
V
RRM
=
5 V
3.0
Repetitive peak reverse current
I
RRM
V
RRM
=
30 V
30.0
500
μ
A
Junction capacitance
C
j
V
R
=
10 V, f
=
1.0 MHz
190
pF
Device mounted on a ceramic board
(soldering land: 2 mm
×
2 mm)
60
R
th (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm
×
6 mm)
135
Thermal resistance
R
th (j-
)
16
°C/W
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
3-4E1A
Weight: 0.023 g (typ.)
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