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參數(shù)資料
| 型號： | CMLT2207 |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 中文描述： | 600 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC, PICOMINI-6 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 110K |
| 代理商： | CMLT2207 |
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT2207 and
CMLT2207G each consist of one isolated 2N2222A
NPN transistor and one complementary isolated
2N2907A PNP transistor, manufactured by the
epitaxial planar process and epoxy molded in an
SOT-563 surface mount package. This PICOmini
device has been designed for small signal general
purpose amplifier and switching applications.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
NPN (Q1)
PNP (Q2)
UNITS
Collector-Base Voltage
VCBO
75
60
V
Collector-Emitter Voltage
VCEO
40
60
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
357
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
CMLT2207
CMLT2207G
SURFACE MOUNT
PICOmini
TM
DUAL, COMPLEMENTARY
SILICON TRANSISTORS
SOT-563 CASE
Central
Semiconductor Corp.
TM
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
ICBO
VCB=60V
-
10
-
nA
ICBO
VCB=50V
-
10
nA
ICBO
VCB=60V, TA=125°C
-
10
-
nA
ICBO
VCB=50V, TA=125°C
-
10
nA
IEBO
VEB=3.0V
-
10
-
nA
ICEV
VCE=60V, VEB(OFF)=3.0V
-
10
-
nA
ICEV
VCE=30V, VEB(OFF)=500mV
-
50
nA
BVCBO
IC=10μA75
-
60
-
V
BVCEO
IC=10mA
40
-
60
-
V
BVEBO
IE=10μA
6.0
-
5.0
-
V
VCE(SAT)
IC=150mA, IB=15mA
-
0.3
-
0.4
V
VCE(SAT)
IC=500mA, IB=50mA
-
1.0
-
1.6
V
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
-
1.3
V
VBE(SAT)
IC=500mA, IB=50mA
-
2.0
-
2.6
V
hFE
VCE=10V, IC=0.1mA
35
-
75
-
hFE
VCE=10V, IC=1.0mA
50
-
100
-
hFE
VCE=10V, IC=10mA
75
-
100
-
hFE
VCE=10V, IC=150mA
100
300
100
300
hFE
VCE=1.0V, IC=150mA
50
-
hFE
VCE=10V, IC=500mA
40
-
50
-
R2 (6-June 2008)
MARKING CODES:
CMLT2207: L70
CMLT2207G: L7G
The CMLT2207G is Halogen Free by design.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CMLT2207G | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:SURFACE MOUNT DUAL, COMPLEMENTARY SILICON TRANSISTORS |
| CMLT2207G TR | 制造商:CENTRAL SEMICONDUCTOR 功能描述:CMLT Series 40 / 60 V 600 mA NPN/PNP PICOmini Dual Silicon Transistor - SOT-563 |
| CMLT2207G TR PBFREE | 制造商:Central Semiconductor Corp 功能描述: |
| CMLT2207TR | 制造商:Central Semiconductor Corp 功能描述:Trans GP BJT NPN/PNP 40V/60V 0.6A 6-Pin SOT-563 T/R |
| CMLT2222A | 功能描述:兩極晶體管 - BJT Dual NPN Small Signl Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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