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參數(shù)資料
| 型號： | CMBTA43 |
| 廠商： | Continental Device India Limited |
| 英文描述： | SILICON EPITAXIAL TRANSISTORS |
| 中文描述： | 硅外延三極管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 80K |
| 代理商： | CMBTA43 |
Continental Device India Limited
Data Sheet
Page 2 of 3
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to T
amb
= 25 °C
Storage temperature
Junction temperature
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
max. 300
max. 300
max.
max.
max.
200 V
200 V
6
V
mA
mW
° C
° C
500
250
–55 to +150
150
max.
THERMAL CHARACTERISTICS
T
j
= P (R
th j–t
+ R
th t–s
+ R
th s–a
) + T
amb
Thermal resistance
from junction to ambient
R
th j–a
=
500
K/W
CHARACTERISTICS
(at T
A
= 25°C unless otherwise specified)
Collector–emitter breakdown voltage
I
C
= 1 mA; I
B
= 0
Collector–base breakdown voltage
I
C
= 100
μ
A; I
E
= 0
Emitter–base breakdown voltage
I
E
= 100
μ
A; I
C
= 0
Collector cut–off current
I
E
= 0; V
CB
= 200 V
I
E
= 0; V
CB
= 160 V
Emitter cut–off current
I
C
= 0; V
BE
= 6 V
I
C
= 0; V
BE
= 4 V
Feedback capacitance at f = 1 MHz
I
E
= 0; V
CB
= 20 V
Saturation voltages
I
C
= 20 mA; I
B
= 2 mA
I
C
= 20 mA; I
B
= 2 mA
D.C. current gain
I
C
= 1 mA; V
CE
= 10 V
I
C
= 10 mA; V
CE
= 10 V
I
C
= 30 mA; V
CE
= 10 V
Transition frequency at f = 35 MHz
I
C
= 10 mA; V
CE
= 20 V
CMBTA 42
A 43
200 V
V
(BR)CEO
min. 300
V
(BR)CBO
min.
300
200 V
V
(BR)EBO
min.
6
V
I
CBO
I
CBO
max. 0.1
max. –
–
0.1
μ
A
μ
A
I
EBO
I
EBO
max. 0.1
max. –
–
0.1
μ
A
μ
A
C
re
max.
3
4
pF
V
CEsat
V
BEsat
max.
max.
0.5
0.9
V
V
h
FE
h
FE
h
FE
min.
min.
min.
25
40
40
f
T
min.
50
MHz
CMBTA42
CMBTA43
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CMBTA44 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CMBTA55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 500MA I(C) | TO-236AA |
| CMBTA56 | 功能描述:兩極晶體管 - BJT Darlington Trans PNP,0.5A,80V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBTA56-T | 功能描述:兩極晶體管 - BJT PNP 0.5A 80V Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBTA56T/-W | 功能描述:兩極晶體管 - BJT PNP 0.5A 80V Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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