參數(shù)資料
型號: CMBTA42
廠商: Continental Device India Limited
英文描述: SILICON EPITAXIAL TRANSISTORS
中文描述: 硅外延三極管
文件頁數(shù): 1/3頁
文件大小: 80K
代理商: CMBTA42
Continental Device India Limited
Data Sheet
Page 1 of 3
SILICON EPITAXIAL TRANSISTORS
N–P–N transistors
Marking
CMBTA42 = 1D
CMBTA43 = 1E
ABSOLUTE MAXIMUM RATINGS
CMBT A 42
max.
max.
max.
max.
max.
max.
A 43
200 V
200 V
V
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to T
amb
= 25 °C
Junction temperature
D.C. current gain
I
C
= 10 mA; V
CE
= 10 V
Transition frequency at f = 35 MHz
I
C
= 10 mA; V
CE
= 20 V
Feedback capacitance at f = 1 MHz
I
C
= 0; V
CE
= 20 V
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
300
300
6
500
250
150
mA
mW
° C
h
FE
min.
40
f
T
min.
50
MHz
C
re
max.
3
4
pF
CMBTA42
CMBTA43
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
2
1
SOT-23 Formed SMD Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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