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參數(shù)資料
| 型號(hào)： | CMBA857 |
| 廠商： | Continental Device India Limited |
| 英文描述： | PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
| 中文描述： | 進(jìn)步黨平面外延硅晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 127K |
| 代理商： | CMBA857 |
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CMBA857
SOT23
MARKING : AS BELOW
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25 deg C unless otherwise specified)
DESCRIPTION
Collector -Emitter Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
60
50
6.0
200
200
125
V
V
V
mA
mW
deg C
deg C
-55 to +125
SYMBOL
VCEO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(Sat)
VBE(Sat)
TEST CONDITION
IC=100uA, IB=0
VCB=60V, IE=0
VEB=6V, IC=0
IC=1mA,VCE=6V
IC=0.1mA,VCE=6V
IC=100mA,IB=10mA
IC=100mA,IB=10mA
MIN
50
-
-
150
90
-
-
TYP
-
-
-
-
-
-
-
MAX
-
100
100
500
-
0.30
1.0
UNIT
V
nA
nA
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
V
V
ft
Cob
VCE=6V,IC=10mA,
VCB=6V, IE=0
f=1MHz
VCE=6V, IE=0.3mA
f=100Hz, Rg=10kohms
-
-
200
4.0
-
-
MHz
pF
Noise Figure
NF
-
-
20
dB
CLASSIFICATION
hFE(1)
MARKING
E
F
150-300
PA
250-500
PB
PIN CONFIGURATION (PNP)
1 = BASE
2 = EMITTER
3 = COLLECTOR
2
1
3
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
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