參數(shù)資料
型號： CM300DU-12F
廠商： Mitsubishi Electric Corporation
英文描述： HIGH POWER SWITCHING USE
中文描述： 大功率開關使用
文件頁數(shù)： 2/4頁
文件大?。?/td> 74K
代理商： CM300DU-12F
Aug. 1999
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
CES
, V
CE
= 0V
T
j
= 25
°
C
T
j
= 125
°
C
V
CC
= 300V, I
C
= 300A, V
GE
= 15V
V
CC
= 300V, I
C
= 300A
V
GE1
= V
GE2
= 15V
R
G
= 2.1
, Inductive load switching operation
I
E
= 300A
I
E
= 300A, V
GE
= 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compoundapplied
*2
(1/2 module)
Tc measured point is just under the chips
I
C
= 30mA, V
CE
= 10V
I
C
= 300A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
600
±
20
300
600
300
600
780
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
400
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
V
V
W
°
C
°
C
V
N m
N m
g
A
A
1
40
2.2
—
81
5.4
3.0
—
250
120
500
250
150
—
2.6
0.16
0.24
—
0.10
8
3
21
mA
μ
A
nF
nC
μ
C
V
°
C/W
—
—
1.6
1.6
—
—
—
1860
—
—
—
—
—
5.2
—
—
—
0.04
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.1
6
V
V
ns
5
7
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
*1
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (
Note 1
)
Q
rr (
Note 1
)
V
EC(
Note 1
)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
R
th(j-c’)
Q
R
G
Symbol
Parameter
V
GE(th)
V
CE(sat)
Note 1. I
E
, V
EC
, t
rr
, Q
rr
, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150
°
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*
1 : Tc measured point is indicated in OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
3 : If you use this value, R
th(f-a)
should be measured just under the chips.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
T
C
= 25
°
C
Pulse
T
C
= 25
°
C
Pulse
T
C
= 25
°
C
(Note 2)
(Note 2)
Main terminal to base plate, AC 1 min.
Main Terminal M6
Mounting holes M6
Typical value
Symbol
V
CES
V
GES
I
C
I
CM
I
E (
Note 1
)
I
EM (
Note 1
)
P
C (
Note 3
)
T
j
T
stg
V
iso
Parameter
Collector current
Emitter current
Torque strength
Conditions
Unit
Ratings
—
Unit
Typ.
Limits
Min.
Max.
—
MAXIMUM RATINGS
(Tj = 25
°
C)
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C)
Test conditions
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相關代理商/技術參數(shù)
參數(shù)描述
CM300DU-12F_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE
CM300DU-12H 功能描述:IGBT MOD DUAL 600V 300A U SER RoHS:是 類別:半導體模塊 >> IGBT 系列:IGBTMOD™ 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B
CM300DU-12H_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
CM300DU-12NFH 功能描述:IGBT MOD DUAL 600V 300A NFH SER RoHS:是 類別:半導體模塊 >> IGBT 系列:IGBTMOD™ 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B
CM300DU-12NFH_09 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE
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