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參數(shù)資料
| 型號： | CM1223-04ST |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | UNIDIRECTIONAL, SILICON, TVS DIODE, MO-178AB |
| 封裝： | MO-178, 6 PIN |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 573K |
| 代理商： | CM1223-04ST |
2008 California Micro Devices Corp. All rights reserved.
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
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Fax: 408.263.7846
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5
Issue B – 05/13/08
CM1223
Note 1: All parameters specified at TA = -40°C to +85°C unless otherwise noted.
Note 2: These parameters guaranteed by design and characterization.
Note 3: Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5KΩ, VP = 3.3V, VN grounded.
Note 4: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VP = 3.3V, VN grounded.
Note 5: These measurements performed with no external capacitor on VP (VP floating).
ELECTRICAL OPERATING CHARACTERISTICS(SEE NOTE 1)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
VP
Operating Supply Voltage (VP-VN)3.3
5.5
V
IP
Operating Supply Current
(VP-VN)=3.3V
8.0
μA
VSCL
Signal Clamp Voltage
Positive Transients
Negative Transients
IF = 8mA; TA=25°C
6.7
0.60
8.2
0.80
V
ILEAK
Channel Leakage Current
TA=25°C; VP=5V, VN=0V
±0.1
±1.0
μA
CIN
Channel Input Capacitance
At 1 MHz, VP=3.3V, VN=0V, VIN=1.65V;
Note 2 applies
1.0
1.5
pF
ΔC
IN
Channel Input Capacitance
Matching
At 1 MHz, VP=3.3V, VN=0V, VIN=1.65V;
Note 2 applies
0.02
pF
CMUTUAL Mutual Capacitance between sig-
nal pin and adjacent signal pin
At 1 MHz, VP=3.3V, VN=0V, VIN=1.65V;
Note 2 applies
0.11
pF
VESD
ESD Protection
Peak Discharge Voltage at any
channel input, in system
a) Contact discharge per
IEC 61000-4-2 standard
b) Human Body Model,
MIL-STD-883, Method
3015
Notes 2, 4 & 5; TA=25°C
Notes 2, 3 & 5; TA=25°C
±8
±15
kV
VCL
Channel Clamp Voltage
Positive Transients
Negative Transients
TA=25°C, IPP = 1A, tP = 8/20uS;
Notes 2 & 5
+8.8
-1.4
V
RDYN
Dynamic Resistance
Positive Transients
Negative Transients
TA=25°C, IPP = 1A, tP = 8/20uS
Any I/O pin to Ground; Notes 2 & 5
0.7
0.4
Ω
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