- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄298951 > CM1223-04ST UNIDIRECTIONAL, SILICON, TVS DIODE, MO-178AB PDF資料下載
參數(shù)資料
| 型號： | CM1223-04ST |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | UNIDIRECTIONAL, SILICON, TVS DIODE, MO-178AB |
| 封裝： | MO-178, 6 PIN |
| 文件頁數(shù)： | 13/13頁 |
| 文件大?。?/td> | 573K |
| 代理商： | CM1223-04ST |
2008 California Micro Devices Corp. All rights reserved.
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
9
Issue B – 05/13/08
CM1223
Application Information
Design Considerations
In order to realize the maximum protection against
ESD pulses, care must be taken in the PCB layout to
minimize parasitic series inductances on the Supply/
Ground rails as well as the signal trace segment
between the signal input (typically a connector) and the
ESD protection device. Refer to Figure 6, which illus-
trates an example of a positive 8kV ESD pulse striking
an input channel. The 8kV ESD current pulse will divert
along the path as indicated in Figure 4, through the D1
diode and the Zener diode back to the ground rail.
An ESD current pulse can rise from zero to its peak
value in a very short time. As an example, a level 4
contact discharge per the IEC61000-4-2 standard
results in a current pulse that rises from zero to 30
Amps in 1ns. The CM1223 has a fast response time of
less than 1ns and low clamp voltage to handle this
pulse.
Similarly for negative ESD pulses, parasitic series
inductance from the VN pin to the ground rail will lead
to drastically increased negative voltage on the line
being protected.
The CM1223 has an integrated backdrive diode
between VP and VN to prevent backdrive current flow
from the powered sources.
As a general rule, the ESD Protection Array should be
located as close as possible to the point of entry of
expected electrostatic discharges.
Additional Information
See also California Micro Devices Application Note
AP209, “Design Considerations for ESD Protection”, in
the Applications section at www.cmd.com.
Figure 6. Application of Positive ESD Pulse between Input Channel and Ground
VN
One Channel of
CM1223
SYSTEM OR
CIRCUITRY
BEING
LINE BEING PROTECTED
D1
D2
GROUND RAIL
30A
0A
8kV ESD Pulse
CHASSIS GROUND
PATH OF POSI-
TIVE ESD CUR-
RENT PULSE IESD
I/O pin
PATH OF NEGATIVE
ESD
VP
VCC
POSITIVE SUPPLY
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CM200 | QUARTZ CRYSTAL RESONATOR, 0.032768 MHz |
| CM2021Y330R-10 | CHOKE COMMON MODE 30 OHMS SMD |
| CM3421Y600R-10 | CHOKE COMMON MODE 60 OHMS SMD |
| CM2545X171B-10 | CHOKE COMMON MODE 170 OHMS PCB |
| CM2545X171R-10 | CHOKE COMMON MODE 170 OHMS SMD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CM1223-08MR | 功能描述:ESD 抑制器 8-Channel ESD Array Backdrive Protection RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| CM1223-08MS | 制造商:CALMIRCO 制造商全稱:California Micro Devices Corp 功能描述:Industry First Low Capacitance ESD Protection Arrays w/Backdrive Protection |
| CM1223-SBX2LW-Z | 制造商:Fema Electronics Corporation 功能描述: |
| CM1223-SGT2LW-Z | 制造商:Fema Electronics Corporation 功能描述: |
| CM1224 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:2- and 4-Channel Low Capacitance ESD Protection Arrays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。