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參數(shù)資料
| 型號(hào)： | CLY32 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HiRel C-Band GaAs Power-MESFET |
| 中文描述： | 伊雷爾C波段砷化鎵功率場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 574K |
| 代理商： | CLY32 |
CLY32
S emiconductor Group
4 of 10
Draft D, S eptember 99
Electrical Characteristics
(continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Linear power gain
1)
V
DS
= 9 V, I
D
= 380 mA, f = 2.3 GHz,
P
in
= 0 dBm
G
lp
dB
CLY32-00
11.0
12.0
-
CLY32-05
11.5
12.5
-
CLY32-10
11.5
12.5
-
Output power at 1dB gain compr.
1)
V
DS
= 9 V, I
D(RF off)
= 380 mA, f = 2.3 GHz
P
1dB
dBm
CLY32-00
-
31.8
-
CLY32-05
-
32.3
-
CLY32-10
-
33.0
-
Output power
1)
V
DS
= 9 V, I
D(RF off)
= 380 mA, f = 2.3 GHz,
P
in
= 16.5 dBm
P
out
dBm
CLY32-00
31.5
31.8
-
CLY32-05
32.0
32.3
-
CLY32-10
32.5
33.0
-
Power added efficiency
1), 2)
V
DS
= 9 V, I
D(RF off)
= 380 mA, f = 2.3 GHz,
P
in
= 21.5 dBm
PAE
%
CLY32-00
40
47
-
CLY32-05
45
50
-
CLY32-10
45
53
-
Notes.:
1) RF Power characteristics given for power matching conditions
2) Power added efficiency: PAE = (P
RFout
- P
RFin
) / P
DC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CLY32-00 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel C-Band GaAs Power-MESFET |
| CLY32-05 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel C-Band GaAs Power-MESFET |
| CLY32-10 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel C-Band GaAs Power-MESFET |
| CLY35 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel C-Band GaAs Power-MESFET |
| CLY35-00 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel C-Band GaAs Power-MESFET |
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