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參數(shù)資料
| 型號(hào)： | CLY32 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HiRel C-Band GaAs Power-MESFET |
| 中文描述： | 伊雷爾C波段砷化鎵功率場效應(yīng)管 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 574K |
| 代理商： | CLY32 |
CLY32
S emiconductor Group
3 of 10
Draft D, S eptember 99
Electrical Characteristics
(at T
A
=25°C; unless otherwise specified)
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Drain-source saturation current
V
DS
= 2 V, V
GS
= 0 V
I
Dss
600
1000
1400
mA
Gate threshold voltage
V
DS
= 3 V, I
D
= 40 mA
-V
Gth
1.6
2.6
3.6
V
Drain current at pinch-off, low V
DS
V
DS
= 3 V, V
GS
= -3.8 V
I
Dp3
-
-
100
μA
Gate current at pinch-off, low V
DS
V
DS
= 3 V, V
GS
= -3.8 V
-I
Gp3
-
-
40
μA
Drain current at pinch-off, high V
DS
V
DS
= 12 V, V
GS
= -4 V
I
Dp12
-
-
2000
μA
Gate current at pinch-off, high V
DS
V
DS
= 12 V, V
GS
= -4 V
-I
Gp12
-
-
800
μA
Transconductance
V
DS
= 3 V, I
D
= 380 mA
g
m
300
370
-
mS
Thermal resistance
junction to soldering point
V
DS
= 9 V, I
D
= 380 mA, T
s
= +25°C
R
th J S
-
16
-
K/W
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相關(guān)代理商/技術(shù)參數(shù) |
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| CLY32-00 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel C-Band GaAs Power-MESFET |
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| CLY35 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel C-Band GaAs Power-MESFET |
| CLY35-00 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel C-Band GaAs Power-MESFET |
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