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參數(shù)資料
| 型號： | CLP30-200B1 |
| 廠商： | 意法半導體 |
| 英文描述： | Overvoltage and Overcurrent Protection for Telcom Line(電信裝備的過壓和過流保護) |
| 中文描述： | 過壓和過流保護為電訊，線（電信裝備的過壓和過流保護） |
| 文件頁數(shù)： | 9/11頁 |
| 文件大小： | 107K |
| 代理商： | CLP30-200B1 |
Fig.8:
TESTCIRCUITFOR I
SWOFF
PARAMETER: GO- NOGO TEST
R
- V
BAT
- 48 V
=
Surge
generator
D.U.T.
TIPL or RINGL
GND
Thisis aGO-NOGO testwhichallows to confirm the switch-offcurrent (I
H
) level in functionaltest
circuit.
TESTPROCEDURE
- Adjustthe currentlevelat the I
SWOFF
valueby short circuiting the D.U.T
- Firethe D.U.T witha surgecurrent : I
PP
= 10A, 10/1000
μ
s
- The D.U.Twill come backto the off-statewithin a durationof 50 ms max.
2
3
4
5
6
7
8
9
10
100
200
300
400
500
600
Rsense (
)
Iswon (mA)
Iswon@ 0
°
C Iswon @ 25
°
C Iswon@ 70
°
C
Fig. 9 :
Typical variation of switching-on current
(positive or negative) versus R
SENSE
resistor and
junctiontemperature(see test conditionFig.11).
3
5
Rsense (
7
)
9
11
100
200
300
500
Iswon@ 25
°
C (mA)
Iswon min
negative
Iswon max
negative
Iswonmin
positive
............
Iswon min
positive
Fig. 10 :
Variation of switching-on current versus
R
SENSE
at 25
°
C.
TIP
L
TIP
S
GND
Rsense
RING
L
RING
S
±
R
R
L
I1
48 V
DUT
Fig. 11: I
SWON
MEASUREMEN
T
- ISWON = l1 when the CLP30-200B1 switches on (l1is
progressively increasedusing R)
- Both TIP and RING sides of the CLP30-200B1 are
checked
- RL = 10
.
0
20
40
60
80
0.4
0.6
0.8
1
1.2
1.4
Temperature (
°
C)
ISWOFF [Tj
°
C] / ISWOFF[25
°
C]
fig. 12 :
Relative variation of switching-offcurrent
versus junction temperature (for R
SENSE
between
3 and 10
).
CLP30-200B1
9/11
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| CLP30-200B1_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ASD (Application Specific Devices) Overvoltage and overcurrent protection for telecom line |
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