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參數(shù)資料
| 型號(hào)： | CLP30-200B1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Overvoltage and Overcurrent Protection for Telcom Line(電信裝備的過壓和過流保護(hù)) |
| 中文描述： | 過壓和過流保護(hù)為電訊，線（電信裝備的過壓和過流保護(hù)） |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 107K |
| 代理商： | CLP30-200B1 |
Symbol
I
PP
Parameter
Value
Unit
Line to GNDpeak pulsecurrent
10/1000
μ
s (opencircuit voltagewave shape 10/1000
μ
s)
5/310
μ
s (opencircuit voltagewave shape10/700
μ
s)
Non repetitivesurge peak on-statecurrent
F = 50 Hz
30
40
8.5
4.5
3.5
A
I
TSM
t
p
= 10 ms
t
p
= 200ms
t
p
= 1 s
A
T
stg
T
j
T
L
Storage temperaturerange
Maximum junctiontemperature
Lead temperatureforsoldering during10 s.
-40to +150
150
260
°
C
°
C
ABSOLUTE MAXIMUM RATINGS
(R
SENSE
= 3
,Τ
amb
= 25
°
C)
Symbol
Parameter
Testcondtions
Min
Max
Unit
I
LGL
Line to GNDleakagecurrent
V
LG
= 200 V
MeasuredbetweenTIP(or
RING) and GND
10
μ
A
V
LG
Line to GNDoperatingvoltage
200
V
V
SWON
Line to GNDvoltageat SW1
or SW2switching-on
Measuredat50HzbetweenTIPL
(orRINGL)andGND,onecycle
290
V
I
SWOFF
Line to GNDnegativecurrent
at SW1or SW2switching-off
Referto test circuitfig 9
150
mA
I
SWON
Line currentat SW1or SW2
switching-on
Positivesurge
Negativesurge
220
280
320
380
mA
C
Line to GNDcapacitance
V
LG
= 0V
F = 1MHz
V
OSC
= 200mV
RMS
100
pF
ELECTRICALCHARACTERISTICS
(R
SENSE
= 3
, andT
amb
= 25
°
C)
Symbol
Parameter
Value
Unit
R
th(j-a)
Junctionto ambient
170
°
C/W
THERMAL RESISTANCE
CLP30-200B1
8/11
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CLP30-200B1_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ASD (Application Specific Devices) Overvoltage and overcurrent protection for telecom line |
| CLP30-200B1RL | 功能描述:浪涌抑制器 ASD Overvoltage Prot 290V 150mA Trisil RoHS:否 制造商:Bourns 電壓額定值:40 V 電流額定值:750 mA 工作溫度范圍:- 40 C to + 125 C 端接類型:SMD/SMT 封裝 / 箱體: |
| CLP-305 | 制造商:SYNERGY 制造商全稱:SYNERGY MICROWAVE CORPORATION 功能描述:MIXERS TRIPLE-BALANCED |
| CLP-310 | 制造商:SYNERGY 制造商全稱:SYNERGY MICROWAVE CORPORATION 功能描述:MIXERS TRIPLE-BALANCED |
| CLP3300CE100 | 制造商:Alpha 3 Manufacturing 功能描述: |
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