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參數資料
| 型號： | CHP0232-PM-000T |
| 元件分類： | 放大器 |
| 英文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PM6, 6 PIN |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 611K |
| 代理商： | CHP0232-PM-000T |
3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
CHP0232-PM
Features
InGaP HBT Technology
6mm Square, 50 Ohm Power Module Package
Single Positive Supply
35% Linear Power Added Efficiency
+28.5 dBm Output Power (CDMA Mode)
29 dB Gain at Operating Output Power
On-Board Power Down Mode
7 dB Gain Control via Vmode
Applications
Cellular Multi-Mode Handsets
Cellular Infrastructure
Wireless Local Loop Subscriber Units
CDMA Handsets
CDMA2K 1X Handsets
Description
The CHP0232-PM is a 50 ohm matched, single sup-
ply, linear power amplifier module intended for use in cellular
handsets and wireless local loop subscriber units. The highly
integrated amplifier meets the requirements of CDMA and
CDMA2K 1X systems. It is a member of Celeritek’s new
TrueTriangle family of 3V power amplifier modules.
The CHP0232-PM is packaged in a low-cost, space
efficient, 6mm square, matched module that provides excellent
electrical stability and low thermal resistance. The module
operates from a fixed positive voltage and requires no external
matching which significantly reduces space, cost and enhances
ease of use. The device features 7 dB of gain control via an
integrated attenuator.
The 6x6 mm package is self contained, incorporating
50 ohm input and output matching networks optimized for
output power, linearity and efficiency.
Celeritek’s InGaP HBT technology offers a thermally
robust and reliable PAM (power amplifier module) solution.
824 to 849 MHz
28.5 dBm, Cellular
InGaP HBT Amplifier Module
Preliminary Product Information
July 2002
(1 of 8)
Functional Block Diagram
Application Information
The CHP0232-PM is a two-stage amplifier that requires a
single regulated positive supply along with the unregulated bat-
tery voltage for proper operation. Vref is a regulated 2.95 refer-
ence voltage for the bias control circuitry. It can also be used as
a power down mode select. Vcc is an unregulated supply volt-
age directly from the battery. Vcc should be applied prior to
Vref and before RF input power. Vmode is a control voltage
selection between high and low gain mode. The CHP0232-PM
can be operated over a range of supply voltages and bias points
by adjustment of Vref. It is important that the maximum power
dissipation of the package be observed at all times and that the
maximum voltage across the device is not exceeded.
Circuit Design Considerations
Biasing The positive Vcc supply voltages are applied to pins
1 and 6. Most bypass decoupling is provided on-board. Vref is
applied to pin 3.
The recommended DC bypass capacitance is shown in the
schematic diagram on Page 8.
Inadequate bypass capacitance and inductance around the
DC supply lines can compromise the adjacent channel power
ratio (ACPR), reduce power gain and/or create oscillations.
– Continued on Page 2 –
TM
Absolute Maximum Ratings
Parameter
Rating
Parameter
Rating
Parameter
Rating
Collector Voltage (+Vcc)
+4.5 V*
Reference Voltage (Vref)
+3.1 V
Operating Temperature
-40°C to +85°C
Collector Current (Icc)
1.2 A
Power Dissipation
5 W
Storage Temperature
-65°C to +150°C
RF Input Power (High Mode) 7 dBm
V Mode
+3.1 V
Soldering Temperature
260°C for 5 Sec.
RF Input Power (Low Mode) 13 dBm
Recommended Operating Conditions
Parameter
Typ
Units
Parameter
Typ
Units
Collector Voltage (+Vcc)
3.2 to 4.1
Volts
Operating Temperature (PC Board)
-20 to +70
°C
Reference Voltage (Vref)
+2.95 (±1.1%)
Volts
Mode Control Voltage (Vmode)
High
3.0 (±5%)
V
(Fixed and regulated)
Low
<1.2
V
* RF Off.
Vcc 1
RF IN 2
Vref 3
6 Vcc
5 RF OUT
4 V Mode
Ground connection is
on backside
BIAS
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