參數(shù)資料
型號(hào)： CGD1044HI
廠商： NXP Semiconductors N.V.
元件分類： 功率放大器
英文描述： Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
封裝： CGD1044HI<SOT115J|<<<1<Always Pb-free,;
文件頁(yè)數(shù)： 2/8頁(yè)
文件大小： 84K
代理商： CGD1044HI
CGD1044HI
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 29 September 2010
2 of 8
NXP Semiconductors
CGD1044HI
1 GHz, 25 dB gain GaAs high output power doubler
2.
Pinning information
3.
Ordering information
4.
Limiting values
[1]
The ESD pulse of 2000 V corresponds to a class 2 sensitivity level.
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
1
input
2, 3
common
5+VB
7, 8
common
9output
9
13 57
23 78
5
9
1
sym095
Table 3.
Ordering information
Type number
Package
Name
Description
Version
CGD1044HI
-
rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2
6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max
Unit
VB
supply voltage
-
30
V
Vi(RF)
RF input voltage
single tone
-
75
dBmV
VESD
electrostatic discharge voltage
Human Body Model (HBM);
According JEDEC standard
22-A114E
2000 V
Biased; According
IEC61000-4-2
-
1500 V
Tstg
storage temperature
40 +100 C
Tmb
mounting base temperature
20 +100 C
相關(guān)PDF資料
PDF描述
CGD985HCI Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
CGD985HCI 1 GHz, 25 dB gain GaAs high output power doubler
CGD987HCI Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
CGY1032 1 GHz, 32 dB gain GaAs push-pull amplifier
CGY1041 1 GHz, 21 dB gain GaAs push-pull amplifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CGD1044HI,112 功能描述:射頻放大器 1GHz,25 dB gain GaAs H-output PWR doubler RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
CGD1044HI/01A,112 制造商:NXP Semiconductors 功能描述:PHACGD1044HI/01A,112 1 GHZ, 25 DB GAIN G
CGD1044HI/01B,112 制造商:NXP Semiconductors 功能描述:PHACGD1044HI/01B,112 HYBRID AMPLIFIER MO
CGD1044HI112 制造商:NXP Semiconductors 功能描述:
CGD1046HI,112 功能描述:射頻放大器 1CH 4.5dB 24V 450mA RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*