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參數(shù)資料
| 型號： | CEM8207(ESD) |
| 廠商： | Chino-Excel Technology Corp. |
| 英文描述： | 20V N Channel MOS |
| 中文描述： | 20V的?頻道馬鞍山 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 56K |
| 代理商： | CEM8207(ESD) |
CEM8207
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
= 250
μ
A
20
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=20V, V
GS
=0V
1
Gate-Body Leakage
ON CHARACTERISTICS
b
I
GSS
V
GS
= 10V, V
DS
=0V
10
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
= 250
μ
A
0.5
1.5
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 4.5V, I
D
=6.0A
17
20
m
V
GS
= 2.5V, I
D
= 5.2A
23
30
m
On-State Drain Current
I
D(ON)
g
V
DS
= 5V, V
GS
= 4.5V
10
7
16
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=10V, I
D
=6.0A
c
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=8V, V
GS
= 0V
f =1.0MH
Z
950
P
F
450
P
F
P
F
135
SWITCHING CHARACTERISTICS
Turn-On Delay Time
c
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 10V,
I
D
= 1A,
V
GS
= 4.5V,
R
GEN
= 6
20
40
ns
ns
ns
ns
20
40
72
130
20
40
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=10V, I
D
= 6A,
V
GS
=4.5V
15
20
nC
nC
nC
3.4
1.2
C
Fall Time
5-79
5
μ
A
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