參數(shù)資料
型號(hào): CEM8207
廠商: Chino-Excel Technology Corp.
英文描述: Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述: 雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 56K
代理商: CEM8207
20
Dual N-Channel Enhancement Mode Field Effect Transistor
Feb. 2003
FEATURES
20V , 6A , R
DS(ON)
=20m
R
DS(ON)
=30m
@V
GS
=4.5V.
@V
GS
=2.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Surface Mount Package.
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
12
V
Drain Current-Continuous
-Pulsed
I
D
6
24
6
2
A
A
A
W
I
DM
Drain-Source Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and Storage
Temperature Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
R
JA
62.5
/W
C
CEM8207
a
a
a
a
1
S
1
2
G
1
3
4
8
7
6
5
S
2
G
2
D
1
D
1
D
2
D
2
SO-8
1
5-78
5
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