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參數(shù)資料
| 型號： | CEM8206 |
| 廠商： | Chino-Excel Technology Corp. |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 61K |
| 代理商： | CEM8206 |
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =1.7A
0.75
1.2
V
b
Notes
a.Surface Mounted on FR4 Board, t 10sec.
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:PulseWidth 300
s, Duty Cycle 2%.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
,
C
I
D
,
5-75
5
0
2
4
6
8
10
12
Ciss
Coss
Crss
2400
2000
1600
1200
800
400
0
CEM8206
20
16
12
8
4
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
=4.5,3.5,2.5V
V
GS
=1.5V
V
GS
=2.0V
Figure 4. On-Resistance Variation with
Temperature
T
J
, Junction Temperature( C)
O
R
D
,
-50 -25
0
25
50
75
100 125 150
1.80
1.60
1.40
1.20
1.00
0.80
0.60
V
GS
=4.5V
I
D
=6.0A
R
D
,
25 C
-55 C
25
20
15
10
5
0
0.0
0.5
1
1.5
2
2.5
3
Tj=125 C
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