參數(shù)資料
型號(hào): CEM4532
廠商: Chino-Excel Technology Corp.
英文描述: Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
中文描述: 雙增強(qiáng)模式場(chǎng)效應(yīng)晶體管(N和P溝道)
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 84K
代理商: CEM4532
CEM4532
N-Channel ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250
μ
A
30
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
V
DS
=30V, V
GS
=0V
1
Gate-Body Leakage
ON CHARACTERISTICS
b
I
GSS
V
GS
=
20V, V
DS
=0V
100
nA
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250
μ
A
1
3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=4.7A
40
55
m
m
V
GS
=4.5V, I
D
=3.7A
70
85
On-State Drain Current
I
D(ON)
g
V
DS
= 5V, V
GS
= 10V
15
5
A
S
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
FS
V
DS
=15V, I
D
=4.7A
c
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
357
P
F
190
P
F
P
F
60
SWITCHING CHARACTERISTICS
Turn-On Delay Time
c
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 15V,
I
D
= 1A,
V
GS
= 10V,
R
GEN
= 6
15
30
ns
ns
ns
ns
18
40
60
30
5
15
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=15V, I
D
= 4.7A,
V
GS
=10V
10.4
15
nC
nC
nC
2.3
2.8
C
Fall Time
5-8
5
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