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參數(shù)資料
| 型號(hào)： | CEF10N6 |
| 英文描述： | 600V N Channel MOS |
| 中文描述： | 600V的?頻道馬鞍山 |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | CEF10N6 |
6-111
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULSE WIDTH
INVERTED
T
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve
r
V
DD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
V
G
,
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
V
DS
, Drain-Source Voltage (V)
I
D
,
2
1
0.1
0.01
0.01
0.1
1
10
100
1000
10000
P
DM
t
1
t
2
1. R
JC
(t)=r (t) * R
JC
2. R
JC
=See Datasheet
3. T
JM-
T
C
= P* R
JC
(t)
4. Duty Cycle, D=t1/t2
D=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
15
12
9
6
3
0
0
6
12
18
24
30
36
42
48
V
DS
=320V
I
D
=10A
100
10
0.1
1
10
100
1000
V
GS
=20V
Tc=25 C
Single Pulse
R
DS
(ON Lmt
1
40
500
10
t
100
s
1ms
10ms
DC100ms
D=0.01
6
CEF10N4
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