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參數(shù)資料
| 型號： | CEF10N6 |
| 英文描述： | 600V N Channel MOS |
| 中文描述： | 600V的?頻道馬鞍山 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 41K |
| 代理商： | CEF10N6 |
450
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
450V ,5.6A ,R
DS(ON)
= 700m
@V
GS
=10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
TO-220F full-pak for through hole.
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
30
V
-Pulsed
I
D
17
A
I
DM
5.6
A
Drain-Source Diode Forward Current
I
S
5.6
A
Maximum Power Dissipation
P
D
W
W/ C
Operating and Storage Temperature Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
2.8
65
/W
C
/W
C
@Tc=25 C
Derate above 25 C
45
0.36
Drain Current-Continuous
S
G
D
6-107
Sep. 2002
TO-220F
S
D
G
6
CEF10N4
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| CEF1165 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEF1175 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEF1195 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEF12N5 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| CEF12N6 | 制造商:CET 制造商全稱:Chino-Excel Technology 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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