參數(shù)資料
型號: CEF04N6
廠商: Chino-Excel Technology Corp.
英文描述: N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)模式的邏輯電平場效應(yīng)晶體管
文件頁數(shù): 1/5頁
文件大?。?/td> 43K
代理商: CEF04N6
600
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 2.5A , R
DS(ON)
=2.5
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
@V
GS
=10V.
TO-220F full-pak for through hole
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
30
V
-Pulsed
I
D
2.5
A
I
DM
A
Drain-Source Diode Forward Current
I
S
2.5
A
Maximum Power Dissipation
P
D
W
W/ C
Operating and Storage Temperautre Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
3.6
65
/W
C
/W
C
@Tc=25 C
Derate above 25 C
35
0.28
Drain Current-Continuous
S
G
D
6-122
Feb. 2003
10
CEF04N6
TO-220F
S
D
G
6
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