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參數(shù)資料
| 型號： | CE2A3Q |
| 廠商： | NEC Corp. |
| 英文描述： | on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
| 中文描述： | 片上NPN硅外延電阻晶體管中速開關(guān) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 232K |
| 代理商： | CE2A3Q |
2002
Document No. D16179EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
CE2A3Q
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The CE2A3Q is a transistor of on-chip high hFE resistor
incorporating dumper diode in collector to emitter as protect
elements. This transistor is ideal for actuator drives of OA
equipments and electric equipments.
FEATURES
On-chip bias resistor: R
1
= 1.0 k
, R
2
= 10 k
Low power consumption during driving:
V
OL
= 0.12 V @V
I
= 5.0 V, I
C
= 0.5 A
On-chip dumper diode for reverse cable
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC Corporation
to know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
15
V
Collector current (DC)
I
C(DC)
±
2.0
A
Collector current (Pulse)
I
C(pulse)
*
±
3.0
A
Base current (DC)
I
B(DC)
0.03
A
Total power dissipation
P
T
1.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
PACKAGE DRAWING (UNIT: mm)
* PW
≤
10 ms, duty cycle
≤
50 %
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