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參數(shù)資料
| 型號： | CE2F3P |
| 廠商： | NEC Corp. |
| 英文描述： | on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
| 中文描述： | 片上NPN硅外延電阻晶體管中速開關(guān) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 110K |
| 代理商： | CE2F3P |
2002
Document No. D13110EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
CE2F3P
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The CE2F3P is a transistor of on-chip high hFE resistor
incorporating dumper diode in collector to emitter as protect
elements. This transistor is ideal for actuator drives of OA
equipments and electric equipments.
FEATURES
On-chip bias resistor: R
1
= 2.2 k
, R
2
= 10 k
Low power consumption during driving:
V
OL
= 0.12 V @V
I
= 5.0 V, I
C
= 0.5 A
On-chip dumper diode for reverse cable
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
15
±
2.0
±
3.0
V
Collector current (DC)
I
C(DC)
A
Collector current (Pulse)
I
C(pulse)
*
A
Base current (DC)
I
B(DC)
0.03
A
Total power dissipation
P
T
1.0
W
°
C
°
C
Junction temperature
T
j
150
Storage temperature
* PW
≤
10 ms, duty cycle
≤
50 %
T
stg
55 to +150
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 40 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
= 5.0 V, I
C
= 0.2 A
700
1200
DC current gain
h
FE2
**
V
CE
= 5.0 V, I
C
= 1.0 A
1000
1600
3000
DC current gain
h
FE3
**
V
CE
= 5.0 V, I
C
= 2.0 A
500
1200
Low level output voltage
V
OL
**
V
I
= 5.0 V, I
C
= 0.5 A
V
CE
= 12 V, I
C
= 100
μ
A
0.12
0.3
V
Low level input voltage
V
IL
**
0.5
0.4
V
Input resistance 1
R
1
1.54
2.2
2.86
k
k
μ
s
μ
s
μ
s
Input resistance 2
R
2
7.0
10.0
13.0
Turn-on time
t
on
0.4
Storage time
t
stg
1.4
Fall time
t
f
I
C
= 1.0 A
I
BI
=
I
B2
= 10 mA
V
CC
= 20 V, R
L
= 20
0.5
**Pulse test PW
≤
350
μ
s, duty cycle
≤
2 %
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