參數(shù)資料
型號： CDT13003E
廠商： Continental Device India Limited
英文描述： NPN SILICON POWER TRANSISTOR
中文描述： NPN硅功率晶體管
文件頁數(shù)： 2/4頁
文件大小： 175K
代理商： CDT13003E
NPN SILICON POWER TRANSISTOR
CDT13003
TO-220
Plastic Package
ELECTRICAL CHARACTERISTICS (T
a
=25oC unless specified otherwise)
DESCRIPTION
DC Current Gain
SYMBOL
*h
FE
TEST CONDITION
**I
C
=0.5A, V
CE
=5V 11 - 30
I
C
=1.5A, V
CE
=5V
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1.5A, I
B
=0.5A
I
C
=1A, I
B
=0.25A,T
c
=100oC
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1A, I
B
=0.25A,T
c
=100oC
MIN
TYP
MAX
UNIT
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25
0.5
1.0
2.5
1.0
1.0
1.2
1.1
Collector Emitter Saturation Voltage
*V
CE (sat)
V
V
V
V
V
V
V
Base Emitter Saturation Voltage
*V
BE (sat)
DYNAMIC CHARACTERISTICS
DESCRIPTION
SYMBOL
TEST CONDITION
I
C
=100mA, V
CE
=10V,
f=1MHz
V
CB
=10V, f=0.1MHz
MIN
TYP
MAX
UNIT
Current Gain Bandwidth Product
f
T
4.0
-
-
MHz
Output Capacitance
C
ob
-
21
-
pF
SWITCHING TIME
Turn On Time
Storage Time
Fall Time
t
on
t
stg
t
f
1.1
4.0
0.7
μ
s
μ
s
μ
s
** h
FE
Classification:-
Note:- Product is pre selected in DC current
gain (Groups A to F). CDIL reserves the right
to ship any of the groups according to
production availability.
A B C E F
11-16 15-19 18-22 21-25 24-30
MARKING
CDT CDT CDT CDT CDT
13003 13003 13003 13003 13003
A XY B XY C XY E XY F XY
X= Year of Manufacturer Code
Y= Month Code
*Pulse Test:- PW=300
m
s, Duty Cycle=2%
CDT13003Rev_1 230306D
V
CC
=125V, I
C
=1A, I
B1
=0.2A,
I
B2
=0.2A
Continental Device India Limited
Data Sheet
Page 2 of 4
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