參數(shù)資料
型號: CDT13003E
廠商: Continental Device India Limited
英文描述: NPN SILICON POWER TRANSISTOR
中文描述: NPN硅功率晶體管
文件頁數(shù): 1/4頁
文件大?。?/td> 175K
代理商: CDT13003E
NPN SILICON POWER TRANSISTOR
CDT13003
TO-220
Plastic Package
Applications
Suitable for Lighting, Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter (sus) Voltage
Emitter Base Voltage
Collector Current Continuous
Peak (1)
Base Current Continuous
Peak (1)
Emitter Current Continuous
Peak (1)
Power Dissipation @ T
a
=25 oC
Derate Above 25oC
Power Dissipation @ T
c
=25 oC
Derate Above 25oC
Operating And Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
P
D
T
j,
T
stg
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering
Purpose: 1/8" from Case for 5 Seconds
R
th (j-c)
R
th (j-a)
(1) Pulse Test: Pulse Width=5ms, Duty Cycle=10%
ELECTRICAL CHARACTERISTICS (T
a
=25oC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emitter (sus) Voltage
Collector Cut Off Current
SYMBOL
V
CBO
*V
CEO(sus)
I
CBO
TEST CONDITION
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
V
CB
=600V
,
I
E
=0
V
CB
=600V
,
I
E
=0, T
c
=100oC
V
EB
=9V, I
C
=0
MIN
600
400
-
TYP
-
-
-
MAX
-
-
1.0
5.0
1.0
UNIT
V
V
mA
mA
mA
Emitter Cut Off Current
I
EBO
-
-
*Pulse Test:- PW=300
m
s, Duty Cycle=2%
CDT13003Rev_1 230306D
275
oC
T
L
UNIT
V
V
V
A
A
A
A
W
A
A
oC
oC/W
oC/W
VALUE
600
400
9.0
1.8
3.5
0.75
1.5
2.25
4.5
1.4
11.2
50
480
- 65 to+150
2.08
89
mW/ oC
W
mW/ oC
Continental Device India Limited
Data Sheet
Page 1 of 4
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
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