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參數(shù)資料
| 型號： | CDD1933 |
| 英文描述： | TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SOT-32 |
| 中文描述： | 晶體管|晶體管|達林頓|叩| 80V的五（巴西）總裁| 4A條一（c）|采用SOT - 32 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 41K |
| 代理商： | CDD1933 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR
CDD1933
(9AW)
TO126
MARKING: CDD
1933
Low Freq. Power Amp.
Built in Damper Diode
Complementry CDB 1342
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Peak*
Collector Power Dissipation @ Ta=25 deg C
Collector Power Dissipation @ Tc=25 deg C
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
80
80
7
4
6
1.5
30
150
V
V
V
A
A
W
W
PC
Tj
Tstg
deg C
deg C
-55 to +150
*Single Pulse Pw=100ms
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Collector Emitter Voltage
Collector Base Voltage
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
DC Current Gain
VCEO
VCBO
ICBO
IEBO
VCE(Sat)** IC=2A,IB=4mA
hFE**
IC=2A, VCE=3V
IC=1mA, IB=0
IC=50uA, IE=0
VCB=80V, IE=0
VBE=5V,IC=0
80
80
-
-
-
1.0
-
-
-
-
-
-
-
-
V
V
uA
mA
V
K
100
3.0
1.5
10
Dynamic Characteristics
Transition Frequency
ft
VCE=5V,IC=0.2A,
f=10MHz
-
40
-
MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0
f=1MHz
-
35
-
pF
**Pulse Test
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 2
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