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參數(shù)資料
| 型號(hào)： | CDD2395D |
| 英文描述： | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-220AB |
| 中文描述： | 晶體管|晶體管|叩| 50V五（巴西）總裁| 3A條一（c）| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 89K |
| 代理商： | CDD2395D |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON EPITAXIAL POWER TRANSISTOR
CDD2395
(9AW)
TO-220
MARKING : AS BELOW
Designed For Relay drive and DC-DC Converter.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter- Base Voltage
Collector Current
Peak (pulse)
Power Dissipation @ Ta=25 deg C
Power Dissipation @ Tc=25 deg C
Junction Temperature
Storage Temperature Range
*Single Pulse Pw=100ms
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
Dynamic Characteristics
Transition Frequency
SYMBOL
VCBO
VCEO
VEBO
IC
ICP*
PC
VALUE
60
50
5.0
3.0
4.5
2.0
30
150
-55 to +150
UNIT
V
V
V
A
A
W
W
deg C
deg C
Tj
Tstg
SYMBOL
VCEO
VCBO
VEBO
ICBO
IEBO
VCE(Sat)
VBE(Sat)
hFE
TEST CONDITION
IC=1mA, IB=0
IC=50uA, IE=0
IE=50uA,IC=0
VCB=60V, IE=0
VEB=4V,IC=0
IC=2A,IB=0.2A
IC=2A, IB=0.2A
IC=0.5A, VCE=3V
MIN
50
60
5.0
-
-
-
-
60
TYP
-
-
-
-
-
-
-
-
MAX
-
-
-
1.0
1.0
1.0
1.5
320
UNIT
V
V
V
uA
uA
V
V
ft
VCE=5V,IC=0.5A,
f=30MHz
VCB=10V, IE=0
f=1MHz
-
100
-
MHz
Collector Output Capacitance
Cob
-
35
-
pF
hFE CLASSIFICATION:-
MARKING :
D : 60 -120;
CDD
2395
D
E : 100 -200;
CDD
2395
E
F: 160-320;
CDD
2395
F
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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