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參數(shù)資料
| 型號(hào)： | CAT64LC40URITE13 |
| 元件分類： | DRAM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 140K |
| 代理商： | CAT64LC40URITE13 |
4
CAT64LC10/20/40
Doc. No. 1021, Rev. A
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) This parameter is sampled but not 100% tested.
(3) t
PUR
and t
PUW
are the delays required from the time V
CC
is stable until the specified operation can be initiated.
WRITE CYCLE LIMIITS
Symbol
Parameter
Min.
Max.
Units
t
WR
Program Cycle Time
2.5V
10
ms
4.5V–6.0V
5
A.C. OPERATING CHARACTERISTICS
V
CC
= +2.5V to +6.0V, unless otherwise specified.
Limits
Symbol
Parameter
Min.
Typ.
Max.
Units
t
CSS
CS
Setup Time
100
ns
t
CSH
CS
Hold Time
100
ns
t
DIS
DI Setup Time
200
ns
t
DIH
DI Hold Time
200
ns
t
PD1
Output Delay to 1
300
ns
t
PD0
Output Delay to 0
300
ns
t
HZ(2)
Output Delay to High Impendance
500
ns
t
CSMIN
Minimum
CS
High Time
250
ns
t
SKHI
Minimum SK High Time
2.5V
1000
ns
4.5V–6.0V
400
t
SKLOW
Minimum SK Low Time
2.5V
1000
ns
4.5V–6.0V
400
t
SV
Output Delay to Status Valid
500
ns
f
SK
Maximum Clock Frequency
2.5V
250
kHz
4.5V–6.0V
1000
t
RESS
Reset to
CS
Setup Time
0
ns
t
RESMIN
Minimum RESET High Time
250
ns
t
RESH
RESET to READY Hold Time
0
ns
t
RC
Write Recovery
100
ns
POWER-UP TIMING
(1)(3)
Symbol
Parameter
Min.
Max.
Units
μ
s
t
PUR
Power-Up to Read Operation
10
t
PUW
Power-Up to Program Operation
1
ms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CAT64LC40URTE13 | EEPROM |
| CAT64LC40UTE13 | 72-Mbit QDR™-II SRAM 2-Word Burst Architecture |
| CAT64LC40ZJ | 72-Mbit QDR™-II SRAM 2-Word Burst Architecture |
| CAT64LC40ZJI | 72-Mbit QDR™-II SRAM 2-Word Burst Architecture |
| CAT64LC40ZJI-TE13 | 72-Mbit QDR-II™ SRAM 2-Word Burst Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT64LC40URTE13 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| CAT64LC40U-T3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:4 kb SPI Serial EEPROM |
| CAT64LC40UTE13 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| CAT64LC40V | 功能描述:電可擦除可編程只讀存儲(chǔ)器 (256x16) 4K RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT64LC40VA-GT3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:4 kb SPI Serial EEPROM |
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