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參數(shù)資料
| 型號： | CAT22C10W-20-TE13 |
| 英文描述： | 256-Bit Nonvolatile CMOS Static RAM |
| 中文描述： | 256位非易失性的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 514K |
| 代理商： | CAT22C10W-20-TE13 |
CAT22C10
2
Doc. No. 1082, Rev. O
MODE SELECTION
(1)(2)(3)
Input
Mode
CS
WE
RECALL
STORE
I/O
Standby
H
X
H
H
Output High-Z
RAM Read
L
H
H
H
Output Data
RAM Write
L
L
H
H
Input Data
(EEPROM
→
RAM)
(EEPROM
→
RAM)
(RAM
→
EEPROM)
(RAM
→
EEPROM)
X
H
L
H
Output High-Z RECALL
H
X
L
H
Output High-Z RECALL
X
H
H
L
Output High-Z STORE
H
X
H
L
Output High-Z STORE
BLOCK DIAGRAM
POWER-UP TIMING
(4)
Symbol
Parameter
Min.
Max.
Units
VCCSR
V
CC
Slew Rate
0.5
0.005
V/ms
Note:
(1)
RECALL
signal has priority over
STORE
signal when both are applied at the same time.
(2)
STORE
is inhibited when
RECALL
is active.
(3) The store operation is inhibited when V
CC
is below
≈
3.0V.
(4) This parameter is tested initially and after a design or process change that affects the parameter.
ROW
SELECT
COLUMN SELECT
CONTROL
LOGIC
READ/WRITE
CIRCUITS
RECALL
EEPROM ARRAY
STORE
A0
A1
A2
A3
A4
A5
STORE
RECALL
CS
WE
I/O0
I/O1
I/O2
I/O3
STATIC RAM
ARRAY
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CAT22C10W-30-TE13 | 256-Bit Nonvolatile CMOS Static RAM |
| CAT22C10WA-20-TE13 | 256-Bit Nonvolatile CMOS Static RAM |
| CAT22C10WA-30-TE13 | 256-Bit Nonvolatile CMOS Static RAM |
| CAT22C10WI-20-TE13 | 256-Bit Nonvolatile CMOS Static RAM |
| CAT22C10WI-30-TE13 | 256-Bit Nonvolatile CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT22C10W-30 | 制造商:ON Semiconductor 功能描述:256-BIT N V CMOS STATIC RAM - Rail/Tube |
| CAT22C10W-30TE13 | 制造商:ON Semiconductor 功能描述:256-BIT N V CMOS STATIC RAM - Tape and Reel |
| CAT22C10W-30-TE13 | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:256-Bit Nonvolatile CMOS Static RAM |
| CAT22C10WA-20-TE13 | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:256-Bit Nonvolatile CMOS Static RAM |
| CAT22C10WA-30-TE13 | 制造商:CATALYST 制造商全稱:Catalyst Semiconductor 功能描述:256-Bit Nonvolatile CMOS Static RAM |
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