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參數(shù)資料
| 型號(hào)： | CA3130E |
| 廠商： | Intersil |
| 文件頁數(shù)： | 13/17頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC OPAMP BIMOS SGL 15MHZ 8-DIP |
| 標(biāo)準(zhǔn)包裝： | 50 |
| 放大器類型： | 通用 |
| 電路數(shù)： | 1 |
| 轉(zhuǎn)換速率： | 30 V/µs |
| 增益帶寬積： | 15MHz |
| 電流 - 輸入偏壓： | 5pA |
| 電壓 - 輸入偏移： | 8000µV |
| 電流 - 電源： | 10mA |
| 電流 - 輸出 / 通道： | 45mA |
| 電壓 - 電源，單路/雙路(±)： | 5 V ~ 16 V，±2.5 V ~ 8 V |
| 工作溫度： | -55°C ~ 125°C |
| 安裝類型： | 通孔 |
| 封裝/外殼： | 8-DIP（0.300"，7.62mm） |
| 供應(yīng)商設(shè)備封裝： | 8-PDIP |
| 包裝： | 管件 |
| 其它名稱： | CA3130 |
5
Cascade-connected PMOS transistors Q2, Q4 are the
constant-current source for the input stage. The biasing circuit
for the constant-current source is subsequently described.
The small diodes D5 through D8 provide gate-oxide protection
against high-voltage transients, including static electricity
during handling for Q6 and Q7.
Second-Stage
Most of the voltage gain in the CA3130 is provided by the
second amplifier stage, consisting of bipolar transistor Q11
and its cascade-connected load resistance provided by
PMOS transistors Q3 and Q5. The source of bias potentials
for these PMOS transistors is subsequently described. Miller
Effect compensation (roll-off) is accomplished by simply
connecting a small capacitor between Terminals 1 and 8. A
47pF capacitor provides sufficient compensation for stable
unity-gain operation in most applications.
Bias-Source Circuit
At total supply voltages, somewhat above 8.3V, resistor R2
and zener diode Z1 serve to establish a voltage of 8.3V across
the series-connected circuit, consisting of resistor R1, diodes
D1 through D4, and PMOS transistor Q1. A tap at the junction
of resistor R1 and diode D4 provides a gate-bias potential of
about 4.5V for PMOS transistors Q4 and Q5 with respect to
Terminal 7. A potential of about 2.2V is developed across
diode-connected PMOS transistor Q1 with respect to Terminal
7 to provide gate bias for PMOS transistors Q2 and Q3. It
should be noted that Q1 is “mirror-connected (see Note 8)” to
both Q2 and Q3. Since transistors Q1, Q2, Q3 are designed to
be identical, the approximately 200
A current in Q1
establishes a similar current in Q2 and Q3 as constant current
sources for both the first and second amplifier stages,
respectively.
At total supply voltages somewhat less than 8.3V, zener
diode Z1 becomes nonconductive and the potential,
developed across series-connected R1, D1-D4, and Q1,
varies directly with variations in supply voltage.
Consequently, the gate bias for Q4, Q5 and Q2, Q3 varies in
accordance with supply-voltage variations. This variation
results in deterioration of the power-supply-rejection ratio
(PSRR) at total supply voltages below 8.3V. Operation at
total supply voltages below about 4.5V results in seriously
degraded performance.
Output Stage
The output stage consists of a drain-loaded inverting
amplifier using CMOS transistors operating in the Class A
mode. When operating into very high resistance loads, the
output can be swung within millivolts of either supply rail.
Because the output stage is a drain-loaded amplifier, its gain
is dependent upon the load impedance. The transfer
characteristics of the output stage for a load returned to the
negative supply rail are shown in Figure 2. Typical op amp
loads are readily driven by the output stage. Because large-
signal excursions are non-linear, requiring feedback for good
waveform reproduction, transient delays may be
encountered. As a voltage follower, the amplifier can achieve
0.01% accuracy levels, including the negative supply rail.
NOTE:
8. For general information on the characteristics of CMOS
transistor-pairs in linear-circuit applications, see File Number
619, data sheet on CA3600E “CMOS Transistor Array”.
3
2
7
4
8
1
5
6
BIAS CKT.
COMPENSATION
(WHEN REQUIRED)
AV ≈ 5X
AV ≈
6000X
30X
INPUT
+
-
200
A
200
A
1.35mA
8mA
0mA
V+
OUTPUT
V-
STROBE
CC
OFFSET
NULL
CA3130
(NOTE 7)
(NOTE 5)
NOTES:
6. Total supply voltage (for indicated voltage gains) = 15V with input
terminals biased so that Terminal 6 potential is +7.5V above
Terminal 4.
7. Total supply voltage (for indicated voltage gains) = 15V with
output terminal driven to either supply rail.
FIGURE 1. BLOCK DIAGRAM OF THE CA3130 SERIES
22.5
GATE VOLTAGE (TERMINALS 4 AND 8) (V)
OUTPUT
V
O
L
T
A
GE
(T
E
R
MINALS
4
AN
D
8)
(V
)
17.5
20
12.5
15
10
7.5
2.5
5
0
2.5
7.5
5
10
15
12.5
17.5
0
SUPPLY VOLTAGE: V+ = 15, V- = 0V
TA = 25
oC
LOAD RESISTANCE = 5k
500
1k
2k
FIGURE 2. VOLTAGE TRANSFER CHARACTERISTICS OF
CMOS OUTPUT STAGE
CA3130, CA3130A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CA3130E11 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CA3130EX | 制造商:Rochester Electronics LLC 功能描述:BIMOS OP AMP MOSFET IN/ CMOS OUT BURN-IN 8 PDIP COM - Bulk |
| CA3130EZ | 功能描述:運(yùn)算放大器 - 運(yùn)放 W/ANNEAL OPAMP 15MHZ LWBIAS 0 03NA MIL RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比（最小值）:63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流（最大值）:10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel |
| CA3130M | 功能描述:IC OP AMP 15MHZ BIMOS 8-SOIC RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 放大器類型:通用 電路數(shù):4 輸出類型:滿擺幅 轉(zhuǎn)換速率:0.6 V/µs 增益帶寬積:1MHz -3db帶寬:- 電流 - 輸入偏壓:2pA 電壓 - 輸入偏移:1000µV 電流 - 電源:85µA 電流 - 輸出 / 通道:20mA 電壓 - 電源，單路/雙路(±):1.8 V ~ 6 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:14-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:14-SOICN 包裝:剪切帶 (CT) 產(chǎn)品目錄頁面:680 (CN2011-ZH PDF) 其它名稱:MCP6L04T-E/SLCT |
| CA3130M96 | 功能描述:IC OP AMP 15MHZ BIMOS 8-SOIC RoHS:否 類別:集成電路 (IC) >> Linear - Amplifiers - Instrumentation 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 放大器類型:通用 電路數(shù):4 輸出類型:滿擺幅 轉(zhuǎn)換速率:0.6 V/µs 增益帶寬積:1MHz -3db帶寬:- 電流 - 輸入偏壓:2pA 電壓 - 輸入偏移:1000µV 電流 - 電源:85µA 電流 - 輸出 / 通道:20mA 電壓 - 電源，單路/雙路(±):1.8 V ~ 6 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:14-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:14-SOICN 包裝:剪切帶 (CT) 產(chǎn)品目錄頁面:680 (CN2011-ZH PDF) 其它名稱:MCP6L04T-E/SLCT |
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