參數(shù)資料
型號: C67070-A2111-A70
廠商: SIEMENS AG
英文描述: PTSE 25C 25#16 SKT RECP
中文描述: IGBT功率模塊(半橋包括快速續(xù)流二極管二極管領(lǐng)域加倍)
文件頁數(shù): 1/9頁
文件大?。?/td> 110K
代理商: C67070-A2111-A70
Semiconductor Group
1
Mar-28-1996
BSM 35 GB 120 DN2
IGBT Power Module
Preliminary data
Half-bridge
Including fast free-wheeling diodes
Doubled diode area
Package with insulated metal base plate
Type
BSM 35 GB 120 DN2
V
CE
1200V 50A
I
C
Package
HALF-BRIDGE 1
Ordering Code
C67070-A2111-A70
Maximum Ratings
Parameter
Collector-emitter voltage
Symbol
V
CE
V
CGR
Values
1200
Unit
V
Collector-gate voltage
R
GE
= 20 k
Gate-emitter voltage
1200
± 20
V
GE
I
C
DC collector current
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
35
50
A
I
Cpuls
70
100
P
tot
280
W
T
j
T
stg
+ 150
°C
-55 ... + 150
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t= 1min.
R
thJC
R
thJC
D
V
is
-
-
-
0.44
0.8
2500
K/W
Vac
Creepage distance
Clearance
DIN humidity category, DIN 40 040
20
11
F
mm
-
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56
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