參數(shù)資料
型號(hào): C67070-A2301-A70
廠商: SIEMENS AG
元件分類(lèi): 圓形連接器
英文描述: Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:22-32
中文描述: IGBT功率模塊(單用菜刀與絕緣金屬基板封裝開(kāi)關(guān)二極管)
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 76K
代理商: C67070-A2301-A70
Semiconductor Group
1
Jun-13-1996
BSM 200 GAL 120 DN2
IGBT Power Module
Single switch with chopper diode
Package with insulated metal base plate
Type
BSM 200 GAL 120 DN2
V
CE
1200V 290A
I
C
Package
HALFBRIDGE GAL 2B C67070-A2301-A70
Ordering Code
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Gate-emitter voltage
DC collector current
Symbol
V
CE
V
CGR
Values
1200
Unit
V
1200
± 20
V
GE
I
C
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
200
290
A
I
Cpuls
400
580
P
tot
1400
+ 150
W
T
j
T
stg
°C
Storage temperature
-55 ... + 150
Thermal resistance, chip case
R
thJC
R
thJC
D
R
THJC
DC
V
is
-
-
-
0.09
-
0.125
2500
K/W
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage, t= 1min.
Vac
Creepage distance
Clearance
DIN humidity category, DIN 40 040
20
11
F
mm
-
IEC climatic category, DIN IEC 68-1
-
55 / 150 / 56
相關(guān)PDF資料
PDF描述
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