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參數(shù)資料
| 型號(hào)： | C67040-A4207-A2 |
| 廠商： | SIEMENS AG |
| 英文描述： | IGBT (High switching speed Very low switching losses Low tail current Latch-up free Avalanche rated) |
| 中文描述： | IGBT的（高開(kāi)關(guān)速度非常低開(kāi)關(guān)損耗低尾電流的無(wú)閂鎖雪崩額定） |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | C67040-A4207-A2 |
Semiconductor Group
1
Feb-07-1997
BUP 314S
Preliminary data
IGBT
High switching speed
Very low switching losses
Low tail current
Latch-up free
Avalanche rated
Pin 1
G
Pin 2
C
Pin 3
E
Type
BUP 314S
V
CE
1200V 25A
I
C
Package
TO-218 AB
Ordering Code
C67040-A4207-A2
Maximum Ratings
Parameter
Collector-emitter voltage
Symbol
V
CE
V
CGR
Values
1200
Unit
V
Collector-gate voltage
R
GE
= 20 k
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 90 °C
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
T
C
= 90 °C
Avalanche energy, single pulse
I
C
= 25 A, V
CC
= 50 V, R
GE
= 25
L= 200 μH, T
j
= 25 °C
Power dissipation
1200
V
GE
I
C
± 20
17
25
A
I
Cpuls
34
50
E
AS
65
mJ
T
C
= 25 °C
Chip or operating temperature
Storage temperature
P
tot
300
-55 ... + 150
-55 ... + 150
W
T
j
T
stg
°C
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