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參數(shù)資料
| 型號(hào)： | C67040-A4424-A2 |
| 廠商： | SIEMENS AG |
| 英文描述： | IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated |
| 中文描述： | IGBT的（低正向壓降高開(kāi)關(guān)速度低尾電流閉鎖無(wú)額定雪崩 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 96K |
| 代理商： | C67040-A4424-A2 |
Semiconductor Group
1
Jul-31-1996
BUP 410
IGBT
Preliminary data
Low forward voltage drop
High switching speed
Low tail current
Latch-up free
Avalanche rated
Pin 1
G
Pin 2
C
Pin 3
E
Type
BUP 410
V
CE
600V
I
C
13A
Package
TO-220 AB
Ordering Code
C67040-A4424-A2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 k
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 90 °C
Pulsed collector current, t
p
= 1 ms
T
C
= 25 °C
T
C
= 90 °C
Avalanche energy, single pulse
I
C
= 6 A, V
CC
= 50 V, R
GE
= 25
L = 500 μH, T
j
= 25 °C
Power dissipation
T
C
= 25 °C
Chip or operating temperature
Storage temperature
Symbol
V
CE
V
CGR
Values
600
Unit
V
600
± 20
V
GE
I
C
8
13
A
I
Cpuls
16
26
E
AS
9
mJ
P
tot
50
W
T
j
T
stg
-55 ... + 150
-55 ... + 150
°C
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