參數資料
型號: C505XB900-S6000-A
廠商: Cree, Inc.
英文描述: XBright㈢ Power Chip LED
中文描述: XBright㈢功率貼片發(fā)光二極管
文件頁數: 1/4頁
文件大小: 238K
代理商: C505XB900-S6000-A
Subject to change without notice.
www.cree.com
FEATURES
XBright LED Technology
Larger “Power Chip” Design
High Performance
90 mW min. (460 & 470 nm) Blue
60 mW min. (505 nm) Traffic Green
40 mW min. (527 nm) Green
Single Wire Bond Structure
AuSn Backside Metalization
APPLICATIONS
General Illumination
Automobile
Aircraft
Decorative Lighting
Task Lighting
Outdoor Illumination
White LEDs
Backlighting
Traffic Signals
XBright
Power Chip LED
C
xxx
XB900-S
x
000-A
Cree’s XB power chip series of LEDs are the next generation of solid-state LED emitters that combine highly efficient
InGaN materials with Cree’s proprietary GSiC
substrate to deliver superior price/performance for high-intensity
LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and
require only a single wire bond connection. These LEDs are useful in a broad range of applications such as outdoor
full-motion LED video signs, automotive lighting and white LEDs. Cree’s XB power chips are compatible with optical
power packages that employ proper thermal management.
D
C
xxx
XB900-S
x
000-A Chip Diagram
Top View
Bottom View
GSiC LED Chip
900 x 900 μm
Width = 30 μm
SiC Substrate
h = 250 μm
764 μm
Contact Metal
Bond Pad
120 μm Diameter
Die Cross Section
Cathode (-)
InGaN
Anode (+)
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