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參數(shù)資料
| 型號： | C527XT290-S0100-A |
| 廠商： | Cree, Inc. |
| 英文描述： | XThin㈢ LEDs |
| 中文描述： | XThin㈢發(fā)光二極管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 240K |
| 代理商： | C527XT290-S0100-A |
Subject to change without notice.
www.cree.com
FEATURES
XThin LED Performance
460 & 470 nm
XT-12 – 12.0 mW min.
XT-16 – 16.0 mW min.
XT-18 – 18.0 mW min.
XT-21 – 21.0 mW min.
XT-24 – 24.0 mW min.
505nm – 8.5 mW min.
527nm – 7.0 mW min.
Thin 115 μm Chip
Low Forward Voltage - 3.2 Typical at 20 mA
Single Wire Bond Structure
Class 2 ESD Rating
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APPLICATIONS
Cellular Phone LCD Backlighting
Digital Camera Flash for Mobile Appliance
Mobile Phone Key Pads
White LEDs
Blue LEDs
Green LEDs
Automotive Dashboard Lighting
LED Video Displays
Audio Product Display Lighting
Traffic Signals
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XThin
LEDs
C
xxx
XT290-S
xx
00-A
Cree’s XThin LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary GSiC substrate to deliver superior price/performance for high-intensity LEDs. These LED
chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a
single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and
require a low forward voltage. Cree’s XT chips are tested for conformity to optical and electrical specifications and
the ability to withstand 1000V ESD. Applications for XThin LEDs include next-generation mobile appliances for use
in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption
are required.
D
C
xxx
XT290-S
xx
00-A Chip Diagram
Top View
Bottom View
Die Cross Section
GSiC LED Chip
300 x 300 μm
Gold Bond Pad
105 μm Diameter
SiC Substrate
t = 115μm
Backside
Metalization
Cathode (-)
Anode (+)
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