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參數(shù)資料
| 型號(hào)： | C470XT290-Sxx00-A |
| 廠商： | Cree, Inc. |
| 英文描述： | XThin㈢ LEDs |
| 中文描述： | XThin㈢發(fā)光二極管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 240K |
| 代理商： | C470XT290-SXX00-A |
Copyright 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, GSiC, XThin and XBright are registered trademarks, and XT, XT-12, XT-16, XT-18, XT-21 and XT-24 are trademarks
of Cree, Inc.
2
CPR3BV Rev. H
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Maximum Ratings at T
A
= 25°C
Notes &3
DC Forward Current
C
xxx
XT290-S
xx
00-A
30mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
100mA
LED Junction Temperature
125°C
Reverse Voltage
5 V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +100°C
Electrostatic Discharge Threshold (HBM)
Note 2
1000V
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Class 2
Typical Electrical/Optical Characteristics at T = 25°C, If = 20mA
Note 3
Part Number
Forward Voltage (V
f
, V)
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(
λ
D
, nm)
Min.
Typ.
Max.
Max.
Typ.
C460XT290-S
xx
00-A
2.7
3.2
3.7
2
21
C470XT290-S
xx
00-A
2.7
3.2
3.7
2
22
C505XT290-S0100-A
2.7
3.2
3.7
2
30
C527XT290-S0100-A
2.7
3.2
3.7
2
35
Mechanical Specifications
C
xxx
XT290-S
xx
00-A
Description
Dimension
Tolerance
P-N Junction Area (μm)
250 x 250
± 25
Top Area (μm)
200 x 200
± 25
Bottom Area (μm)
300 x 300
± 25
Chip Thickness (μm)
115
± 15
Au Bond Pad Diameter (μm)
105
-5, +15
Au Bond Pad Thickness (μm)
1.2
± 0.5
Back Contact Metal Area (μm)
210 x 210
± 25
Back Contact Metal Thickness (μm) (Au/Sn)
Note 4
1.7
± 0.3
Notes:
1.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (< 5 seconds). See Cree Xthin Applications Note for more assembly process information.
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is
performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance E.
Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282°C. See XBright
Applications Note for detailed packaging recommendations.
Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the
chip. See Cree XBright Applications Note for more information.
XThin chips are shipped with the junction side down, not requiring a die transfer prior to die attach.
Specifications are subject to change without notice.
2.
3.
4.
5.
6.
7.
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