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參數(shù)資料
| 型號(hào)： | C470MB290-Sxx00 |
| 廠商： | Cree, Inc. |
| 英文描述： | MegaBright㈢ Generation II LEDs |
| 中文描述： | MegaBright㈢第二代發(fā)光二極管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 234K |
| 代理商： | C470MB290-SXX00 |
Subject to change without notice.
www.cree.com
FEATURES
MegaBright LED Performance
460 & 470nm
MB-8 – 8.0 mW min.
MB-10 - 10.0 mW min.
MB-12 - 12.0 mW min.
MB-14 - 14.0 mW min.
MB-16 - 16.0 mW min (460 nm)
505 nm - 6.0 mW min.
527 nm - 5.0 mW min.
Single Wire Bond Structure
Class 2 ESD Rating
–
–
–
APPLICATIONS
White LEDs
LCD Backlighting Units
Outdoor LED Video Displays
Automotive Dashboard Lighting
Traffic Signals
MegaBright
Generation II LEDs
C
xxx
MB290-S
xx
00
Cree’s MB Generation II series of MegaBright LEDs combine highly efficient InGaN materials with Cree’s
proprietary GSiC substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a
geometrically enhanced vertical chip structure to maximize light extraction efficiency and require only a single wire
bond connection. Sorted die kits provide die sheets conveniently sorted into wavelength and radiant flux bins. Cree’s
MB series chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000V
ESD. These LEDs are useful in a broad range of applications such as outdoor full-motion LED video signs, automotive
lighting and white LEDs, yet can also be used in high-volume applications such as LCD backlighting. Cree’s MB series
chips are compatible with most radial and SMT LED assembly processes.
D
C
xxx
MB290-S
xx
00 Chip Diagram
Top View
Bottom View
GSiC LED Chip
300 x 300 μm
SiC Substrate
h = 250 μm
Backside
Metallization
Gold Bond Pad
112 μm Diameter
Die Cross Section
Cathode (-)
Anode (+)
Mesa (junction)
250 x 250 μm
InGaN
相關(guān)PDF資料 |
PDF描述 |
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| C470XB900-S9000-A | XBright㈢ Power Chip LED |
| C470XT290-Sxx00-A | XThin㈢ LEDs |
| C505MB290-S0600 | MegaBright㈢ Generation II LEDs |
| C527MB290-S0500 | MegaBright㈢ Generation II LEDs |
| C505XB900-S6000-A | XBright㈢ Power Chip LED |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| C470PF250B1001 | 制造商:. 功能描述: |
| C470RT200-0301 | 制造商:CREE 制造商全稱:Cree, Inc 功能描述:Reduced Forward Voltage 3.0 V Typical at 5 mA |
| C470RT200-0302 | 制造商:CREE 制造商全稱:Cree, Inc 功能描述:Reduced Forward Voltage 3.0 V Typical at 5 mA |
| C470RT200-0303 | 制造商:CREE 制造商全稱:Cree, Inc 功能描述:Reduced Forward Voltage 3.0 V Typical at 5 mA |
| C470RT200-0304 | 制造商:CREE 制造商全稱:Cree, Inc 功能描述:Reduced Forward Voltage 3.0 V Typical at 5 mA |
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