參數(shù)資料
型號: C30659-900-R8A
廠商: PerkinElmer Inc.
英文描述: Silicon and InGaAs APD Preamplifier Modules
中文描述: 銦鎵砷硅和APD的前置放大器模塊
文件頁數(shù): 1/9頁
文件大?。?/td> 1188K
代理商: C30659-900-R8A
Description
PerkinElmer C30659 Series includes a
Silicon or InGaAs Avalanche
Photodiode with a hybrid preamplifier.
It is supplied in a single modified
12-lead TO-8 package.
The avalanche photodiodes used in
these devices are the C30817E,
C30902E, C30954E, C30956E,
C30645E and C30662E that provide
very good response between 830 and
1550 nanometers and very fast rise
and fall times at all wavelengths. The
preamplifier section uses a very low
noise GaAs FET front end designed to
operate at higher transimpedance
than the regular C30950 series.
200 MHz
(NEP)
Spectral response range:
Silicon APD: 400 to 1100nm
InGaAs APD: 1100 to 1700nm
System bandwidth 50 MHz and
voltages
50
AC Load capability
Hermetically sealed TO-8 packages
High reliability
Fast overload recovery
Pin compatible with the C30950
series
Light entry angle
130°
The C30659 is pin to pin compatible
with the C30950 series. The output
of the C30659 is negative. An emitter
follower is used as an output buffer
stage. To obtain the wideband
characteristics, the output of these
devices should be AC (capacitively)
coupled to a 50 Ohm termination.
The module must not be DC coupled
to loads of less than 2,000 Ohms.
For field use, it is recommended that
a temperature compensated HV
supply be employed to maintain
responsivity constant over
temperature.
www.optoelectronics.perkinelmer.com
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