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參數(shù)資料
| 型號： | C30659-1550-R2A |
| 廠商： | PerkinElmer Inc. |
| 英文描述： | Silicon and InGaAs APD Preamplifier Modules |
| 中文描述： | 銦鎵砷硅和APD的前置放大器模塊 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 1188K |
| 代理商： | C30659-1550-R2A |
www.optoelectronics.perkinelmer.com
10% to 90% p= 900 and 1060nm)
f
(
λ
= 830 and 900nm)
90% to 10% points
-
7
-
-
2
-
ns
-
7
-
-
2
-
ns
Recovery time after overload (note 4)
-
-
150
-
-
150
ns
Output Voltage Swing (1k
load) (note 5)
2
3
-
2
3
-
V
Output Voltage Swing (50
load) (note 5)
0.7
0.9
-
0.7
0.9
-
V
Output Offset Voltage
-1
0.25
1
-1
0.25
1
V
Positive Supply Current (V+)
-
20
35
-
20
35
mA
Negative Supply Current (V-)
-
10
20
-
10
20
mA
Notes: 1. A specific value of V
R
is supplied with each device. The V
R
value will be within the specified ranges.
2. I
f
= 0.1 mA, 25°C
3. NEPmax is the Maximum Output Spectral Noise Voltage max divided by the typical Responsivity.
4. 0dBm, 250ns pulse.
5. Pulsed operation.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| C30659-900-R5B | Silicon and InGaAs APD Preamplifier Modules |
| C30659-900-R8A | Silicon and InGaAs APD Preamplifier Modules |
| C30662E | InGaAs Avalanche Photodiode |
| C30737 | Epitaxial Silicon Avalanche Photodiode |
| C30737E-230 | Epitaxial Silicon Avalanche Photodiode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| C30659-900-R5B | 制造商:PERKINELMER 制造商全稱:PerkinElmer Optoelectronics 功能描述:Silicon and InGaAs APD Preamplifier Modules |
| C30659-900-R8A | 制造商:PERKINELMER 制造商全稱:PerkinElmer Optoelectronics 功能描述:Silicon and InGaAs APD Preamplifier Modules |
| C30662E | 制造商:PERKINELMER 制造商全稱:PerkinElmer Optoelectronics 功能描述:InGaAs Avalanche Photodiode |
| C30665 | 制造商:PERKINELMER 制造商全稱:PerkinElmer Optoelectronics 功能描述:Large-Area InGaAs Photodiodes |
| C3068 | 制造商:GENERAL 制造商全稱:General Cable Technologies Corporation 功能描述:TYPE CMP / CL3P |
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