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參數(shù)資料
| 型號： | C30641 |
| 廠商： | PerkinElmer Inc. |
| 英文描述： | Large-Area InGaAs Photodiodes |
| 中文描述： | 大面積銦鎵砷光電二極管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 255K |
| 代理商： | C30641 |
Package Options
TE-Cooled Devices: Large-area detectors are available
mounted on a 1-stage or 2-stage thermoelectric (TE) cooler.
Cooling increases shunt resistance (see Figure 2) thereby
reducing noise for increased sensitivity. Typical detector
temperature is -10°C with a 1-stage TE cooler or -35°C
using a 2-stage cooler. A TE-cooler option can be specified
by adding the extension -TC (1-stage cooler) or -DTC (2-
stage cooler) to the standard part number (see ordering
guide). More information is available from the "TC-Series
Cooled Photodiodes" datasheet from PerkinElmer
Optoelectronics Canada.
Specifications (at VR= VOP(typical), 22°C)
Parameter
C30619
Typ
C30641
Typ
Units
Min
Max
Min
Max
Active Diameter
Responsivity At 850 nm
At 1300 nm
At 1550 nm
Shunt Resistance (VR= 10 mV)
1
Dark Current
Spectral Noise Current (10 kHz, 1.0 Hz)
Capacitance At VR= 0V
At VR= VOP
Bandwidth (-3 dB, RL= 50)
Linearity
2
Available package types
0.5
0.20
0.90
0.95
250
1
0.02
20
8
350
> +13
D2, D14
1.0
0.20
0.90
0.95
50
5
0.04
100
40
75
> +13
D2, D14
mm
A/W
A/W
A/W
M
nA
pA/√Hz
pF
pF
MHz
dBm
-
0.10
0.80
0.85
10
0.10
0.80
0.85
5
20
0.10
25
10
50
0.15
125
50
Operating Ratings
Parameter
C30619
Typ
C30641
Typ
Units
Min
Max
Min
Max
Operating Voltage
Breakdown Voltage
Maximum Forward Current
Maximum Photocurrent
Power Dissipation
Storage Temperature
Operating Temperature
0
20
5
80
10
0
20
2
80
5
V
V
mA
mA
mW
°C
°C
10
100
100
125
85
10
100
100
125
85
-60
-40
-80
-40
Note 1. Selected higher shunt resistance devices are available to special order.
Note 2. Maximum optical power level for < ±0.04 dB (±1%) responsivity variation under 1300 nm CW illumination, at VR= VOP(typ).
Detector and Pre-Amplifier: Large-area InGaAs detectors are
also available integrated with a preamplifier and TE-cooler. The
HTE-series features large-area InGaAs detectors with a high
gain hybrid transimpedence amplifier mounted on a 2-stage TE
cooler. TE-cooling maximizes sensitivity and stabilizes op-amp
offset and output characteristics. This provides an easy-to-use
high sensitivity detector platform optimized for good temperature
stability over a wide operating temperature range. More
information is available from the HTE-series datasheet. The
standard HTE-2642 incorporates a C30642E chip.
C30619, C30641, C30642, C30665
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| C30642 | Large-Area InGaAs Photodiodes |
| C30665 | Large-Area InGaAs Photodiodes |
| C30659 | Silicon and InGaAs APD Preamplifier Modules |
| C30659-1060-3A | Silicon and InGaAs APD Preamplifier Modules |
| C30659-1060-R8B | Silicon and InGaAs APD Preamplifier Modules |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| C30641GH | 功能描述:LARGE AREA INGAAS PIN PHOTODIODE 制造商:excelitas technologies 系列:- 零件狀態(tài):在售 波長:1550nm 顏色 - 增強:紫外線（UV） 頻譜范圍:800nm ~ 1700nm 二極管類型:引腳 不同 nm 時的響應(yīng)度:0.95 A/W @ 1550nm 響應(yīng)時間:- 電壓 - DC 反向（Vr）（最大值）:80V 電流 - 暗（典型值）:5nA 有效面積:1mm2 視角:- 工作溫度:- 安裝類型:通孔 封裝/外殼:TO-206AA，TO-18-3 金屬罐 標(biāo)準(zhǔn)包裝:50 |
| C30642 | 制造商:PERKINELMER 制造商全稱:PerkinElmer Optoelectronics 功能描述:Large-Area InGaAs Photodiodes |
| C30642-000 | 制造商:TE Connectivity 功能描述:TR16AI-RING-CS8703 |
| C30644 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| C30645D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
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