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參數(shù)資料
| 型號： | C30641 |
| 廠商： | PerkinElmer Inc. |
| 英文描述： | Large-Area InGaAs Photodiodes |
| 中文描述： | 大面積銦鎵砷光電二極管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 255K |
| 代理商： | C30641 |
EVERYTHING
IN A
NEW
LIGHT.
Description
The PerkinElmer family of large-area InGaAs
PIN photodiodes provide high responsivity
from 800 nm to 1700 nm for applications
including optical power meters, fiber optic test
equipment, near-IR spectoscopy and
instrumentation. All devices are planar
passivated and feature low capacitance for
extended bandwidth, and high shunt
resistance for maximum sensitivity. Typical
devices feature <1% non-linearity to optical
powers >+13 dBm (20 mW), and uniformity
within ±2% across the detector active area.
Typical responsivity of 0.2 A/W at 850 nm for
our large-area InGaAs devices allows use of
a single detector in fiber optic test
instrumentation designed to operate at 850,
1300, and 1550 nm.
Devices are available with active areas from
0.5 mm to 3.0 mm in TO-type packages or on
thermoelectric coolers for increased sensitivity
(see below). Photodiodes can also be
mounted on customized ceramic sub-mounts
to suit specific application requirements.
PerkinElmer Optoelectronics Canada is
qualified to ISO-9001 and operates to MIL-Q-
9858Aand AQAP-1 quality standards. All
devices undergo extended life-test and
periodic process qualification programs to
assure high reliability. In addition, all
production devices are sourced from a
qualified wafer, screened with a 16 hour,
200°C burn-in at -10V bias (C30619 and
C30641) or -5V (C30642 and C30665), and
tested to meet responsivity, spectral noise,
capacitance, shunt resistance and dark
current specifications.
Large-Area InGaAs
Photodiodes
C30619, C30641, C30642, C30665
Features
0.5,1.0, 2.0, and 3.0 mm diameters
High responsivity from 850 nm to 1550 nm
High shunt resistance, low dark current
TE-cooled package options
Low capacitance for fast response times
Applications
Power meters
Fiber identifiers
Laser burn-in racks
Near infrared instrumentation
F.T.I.R. spectroscopy
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| C30642 | Large-Area InGaAs Photodiodes |
| C30665 | Large-Area InGaAs Photodiodes |
| C30659 | Silicon and InGaAs APD Preamplifier Modules |
| C30659-1060-3A | Silicon and InGaAs APD Preamplifier Modules |
| C30659-1060-R8B | Silicon and InGaAs APD Preamplifier Modules |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| C30641GH | 功能描述:LARGE AREA INGAAS PIN PHOTODIODE 制造商:excelitas technologies 系列:- 零件狀態(tài):在售 波長:1550nm 顏色 - 增強(qiáng):紫外線（UV） 頻譜范圍:800nm ~ 1700nm 二極管類型:引腳 不同 nm 時的響應(yīng)度:0.95 A/W @ 1550nm 響應(yīng)時間:- 電壓 - DC 反向（Vr）（最大值）:80V 電流 - 暗（典型值）:5nA 有效面積:1mm2 視角:- 工作溫度:- 安裝類型:通孔 封裝/外殼:TO-206AA，TO-18-3 金屬罐 標(biāo)準(zhǔn)包裝:50 |
| C30642 | 制造商:PERKINELMER 制造商全稱:PerkinElmer Optoelectronics 功能描述:Large-Area InGaAs Photodiodes |
| C30642-000 | 制造商:TE Connectivity 功能描述:TR16AI-RING-CS8703 |
| C30644 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| C30645D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
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