參數(shù)資料
型號(hào): BYW51G-200
廠商: 意法半導(dǎo)體
英文描述: High Efficiency Fast Recovery Rectifier Diodes(高效快速修復(fù)整流二極管)
中文描述: 高效快速恢復(fù)整流二極管(高效快速修復(fù)整流二極管)
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 69K
代理商: BYW51G-200
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
0
25
50
75
100
125
150
175
200
T
IM
=tp/T
tp
IM(A)
P=15W
P=5W
P=10W
Fig.2:
Peakcurrent versusform factor.
0.1
1
10
100
Tj=125 C
IFM(A)
VFM(V)
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Fig.3 :
Forward voltage drop versus forward cur-
rent (maximum values).
0.1
1.0
0.2
0.5
Zth(j-c) (tp.
K =
Rth(j-c)
)
=0.5
=0.2
=0.1
Single pulse
tp(s)
T
=tp/T
tp
1.0E-03
1.0E-02
1.0E-01
1.0E+00
K
Fig.4 :
Relative variation of thermal impedance
junctionto case versuspulseduration.
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14
0
2
4
6
8
10
12
14
=0.05
=0.1
=0.2
=0.5
T
=tp/T
tp
IF(av)(A)
PF(av)(W)
=1
Fig.1 :
Average forward power dissipation versus
averageforwardcurrent.
0.001
0.01
0.1
1
0
10
20
30
40
50
60
70
80
90
100
110
120
IM
t
=0.5
t(s)
IM(A)
Tc=25 C
Tc=75 C
Tc=120 C
Fig.5 :
Non repetitive surge peak forward current
versus overloadduration.
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
6
7
8
9
10
11
12
T
=tp/T
tp
=0.5
F(av)(A)
I
o
Tamb( C)
Rth(j-a)=15
C/W
o
Rth(j-a)=Rth(j-c)
Fig.6 :
Average current versus ambient tempera-
ture. (
δ
= 0.5)
BYW51G-200
3/5
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