參數(shù)資料
型號: BYW51G-200
廠商: 意法半導體
英文描述: High Efficiency Fast Recovery Rectifier Diodes(高效快速修復整流二極管)
中文描述: 高效快速恢復整流二極管(高效快速修復整流二極管)
文件頁數(shù): 2/5頁
文件大小: 69K
代理商: BYW51G-200
Symbol
TestConditions
Min.
Typ.
Max.
Unit
I
R
*
T
j
= 25
°
C
V
R
= V
RRM
15
μ
A
T
j
= 100
°
C
1
mA
V
F **
T
j
= 125
°
C
I
F
= 8 A
0.85
V
T
j
= 125
°
C
I
F
= 16 A
1.05
T
j
= 25
°
C
I
F
= 16 A
1.15
Pulse test: * tp= 5 ms,
δ
< 2 %
** tp = 380
μ
s,
δ
< 2 %
To evaluatethe conductionlosses usethe following equation:
P = 0.65x I
F(AV)
+ 0.025x I
F2(RMS)
Symbol
TestConditions
Min.
Typ.
Max.
Unit
trr
T
j
= 25
°
C
I
F
= 0.5A
I
R
= 1A
Irr = 0.25A
25
ns
I
F
= 1A
V
R
=30V
dI
F
/dt = -50A/
μ
s
35
tfr
T
j
= 25
°
C
I
F
= 1A
V
FR
= 1.1 x V
F
tr = 10 ns
15
ns
V
FP
T
j
= 25
°
C
I
F
= 1A
tr = 10 ns
2
V
Symbol
Parameter
Value
Unit
R
th (j-c)
Junctionto case
Perdiode
2.5
°
C/W
Total
1.4
R
th (c)
Coupling
0.25
°
C/W
When the diodes1 and 2 areused simultaneously:
Tj-Tc(diode 1) = P(diode1) x R
th(j-c)
(Perdiode)+ P(diode2) x R
th(c)
THERMAL RESISTANCES
STATIC ELECTRICALCHARACTERISTICS
(Perdiode)
RECOVERYCHARACTERISTICS
BYW51G-200
2/5
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